Composite substrate for LED light emitting element, method of production of same, and LED light emitting element
A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 μm, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 μm, so as to thereby produce the composite substrate for the LED light emitting element.
1. A composite material substrate, formed by a process comprising:
(a) heating a porous body at a temperature of from about 600 to 800° C.,
(b) infiltrating cavities of the porous body with an aluminum alloy having an aluminum content of at least 70 mass % or pure aluminum to form an infiltrated body,
(c) working the infiltrated body to form a composite material of predetermined thickness and a surface roughness (Ra) of 0.01 to 0.5 μm, then
(d) forming, on a surface of the composite material to a thickness of 0.5 to 2 μm and a surface roughness (Ra) of 0.01 to 0.5 μm,
a metal layer comprising Ni, wherein:
the porous body has a porosity of 10 to 50 vol % and comprises silicon carbide.
2. The composite material substrate of claim 1 , wherein the porous body has a three-point bending strength of at least 50 MPa, and the porous body is infiltrated with the aluminum alloy or pure aluminum by squeeze casting at an infiltration pressure of at least 30 MPa.
3. The composite material substrate of claim 1 , wherein the composite material has a thickness of 0.05 to 0.5 mm and a surface roughness (Ra) of 0.01 to 0.5 μm.
4. The composite material substrate of claim 1 , wherein the composite material has a thickness of 0.05 to 0.5 mm.
5. The composite material substrate of claim 1 , wherein the composite material substrate has:
a thermal conductivity of 100 to 500 W/mK at a temperature of 25° C.,
a coefficient of linear thermal expansion of 4 to 9×10 −6 /K at a temperature of 25° C. to 150° C.,
a three-point bending strength of at least 50 MPa, and
a volume resistivity of 10 −9 to 10 −5 Ω-m.
6. The composite material substrate of claim 5 , wherein the composite material substrate has:
a thickness of 0.05 mm to 0.5 mm,
a surface roughness (Ra) of 0.01 to 0.5 μm on at least one main surface, and
a weight decrease of at most 0.2 mg/cm 2 on the at least one main surface when immersed for 1 minute respectively in a 5N HC1 solution at a temperature of 25° C. and a 10N NaOH solution at a temperature of 75° C.
7. A method of producing a composite material substrate, the method comprising:
(a) preparing a porous body having a porosity of 10 to 50 vol % and comprising silicon carbide;
(b) heating the porous body at a temperature of from about 600 to 800° C.,
(c) forming a composite material by infiltrating cavities of the porous body with an aluminum alloy having an aluminum content of at least 70 mass % or pure aluminum and working to a predetermined thickness and a surface roughness (Ra) of 0.01 to 0.5 μm; and
(d) forming, on a surface of the composite material to a thickness of 0.5 to 2 μm and a surface roughness (Ra) of 0.01 to 0.5 μm, a metal layer comprising Ni.
8. The method of claim 7 , wherein:
the porous body has a three-point bending strength of at least 50 MPa, and
the porous body is infiltrated with the aluminum alloy or pure aluminum by squeeze casting at an infiltration pressure of at least 30 MPa.
9. The method of claim 7 , wherein the composite material is worked to a thickness of 0.05 to 0.5 mm and a surface roughness (Ra) of 0.01 to 0.5 μm.
10. The method of claim 7 , wherein:
the composite material is worked to a thickness of 0.05 to 0.5 mm and a surface roughness (Ra) of 0.01 to 2 μm.
11. The composite material substrate of claim 1 , wherein the porous body consists of silicon carbide.
12. The composite material substrate of claim 1 , wherein an aluminum alloy or pure aluminum heated to above the melting point is poured and compressed at a pressure of at least 30 MPa is used in carrying out (b).
13. The method of claim 7 , wherein an aluminum alloy or pure aluminum heated to above the melting point is poured and compressed at a pressure of at least 30 MPa is used in carrying out (b).