Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal
A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig ( 41 ) and a crucible ( 6 ) are accommodated in a chamber ( 1 ). A SiC solution ( 8 ) is housed in the crucible ( 6 ). The jig ( 41 ) includes a seed shaft ( 411 ) and a cover member ( 412 ). The seed shaft ( 411 ) can move up and down, and a SiC seed crystal ( 9 ) is attached to the lower surface thereof. The cover member ( 412 ) is attached to the lower end portion of the seed shaft ( 411 ). The cover member ( 412 ) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft ( 411 ) is disposed in the cover member ( 412 ).
1. A manufacturing apparatus of a SiC single crystal, comprising:
a chamber capable of accommodating a crucible for housing a SiC solution;
a vertical seed shaft which has a lower end surface to which a SiC seed crystal can be attached; and
a cover member which is a housing having an open lower end and can be housed in the crucible, wherein a lower end portion of the seed shaft is disposed inside the cover member, the cover member having a vent hole.
2. The manufacturing apparatus according to claim 1 , wherein
the cover member comprises:
a skirt portion which surrounds the lower end portion of the seed shaft leaving a gap therebetween; and
an upper cover portion through which the seed shaft penetrates and which is connected to an upper end of the skirt portion.
3. The manufacturing apparatus according to claim 1 , wherein
the cover member is fixed to the seed shaft.
4. The manufacturing apparatus according to claim 1 , further comprising:
a fixing member fixing the cover member at a predetermined position in the chamber; wherein
the seed shaft is rotatable around an axis of the seed shaft with respect to the cover member.
5. The manufacturing apparatus according to claim 4 , wherein
the fixing member can move up and down in the up-and-down direction of the manufacturing apparatus.
6. The manufacturing apparatus according to claim 1 , wherein
the lower end of the cover member is to be brought into contact with the SiC solution in the crucible.
7. A jig for use in a manufacturing apparatus of a SiC single crystal by a solution growth method, the jig comprising:
a bar-shaped seed shaft having a lower end surface to which a SiC seed crystal is to be attached; and
a cover member which is a housing having an open lower end, wherein the lower end portion of the seed shaft is disposed inside the cover member, the cover member having a vent hole.
8. The jig according to claim 7 , wherein
the cover member comprises:
a skirt portion which surrounds the lower end portion of the seed shaft leaving a gap therebetween; and
an upper cover portion through which the seed shaft penetrates and which is connected to an upper end of the skirt portion.
9. The jig according to claim 7 , wherein
the cover member is fixed to the seed shaft.
10. The jig according to claim 7 , wherein
the seed shaft is rotatable around an axis of the seed shaft with respect to the cover member.
11. A method for manufacturing a SiC single crystal by a solution growth method, comprising the steps of:
providing a jig including a vertical seed shaft which has a lower end surface, and a cover member which is a housing having an open lower end and inside which a lower end portion of the seed shaft is disposed, the cover member having a vent hole;
attaching a SiC seed crystal to the lower end surface of the seed shaft;
heating a crucible which houses a starting material containing Si to produce a SiC solution;
bringing the SiC seed crystal attached to the jig into contact with the SiC solution in the crucible; and
growing the SiC single crystal on the SiC seed crystal.
12. The method for manufacturing the SiC single crystal according to claim 11 , wherein
the step of growing the SiC single crystal further includes immersing a lower end of the cover member in the SiC solution in the crucible.