Organic light emitting display device and method for manufacturing the same
Disclosed are an organic light emitting display device and a manufacturing method. The organic light emitting display device includes: a data line arranged in a first direction on a substrate; a gate line arranged in a second direction on the substrate; a thin film transistor arranged at a crossing of the gate line and the data line; a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region; a low reflection layer arranged opposite the white pixel region; and a light shield layer arranged opposite to the thin film transistor.
1. An organic light emitting display device comprising:
a data line arranged in a first direction on a substrate;
a gate line arranged in a second direction on the substrate;
a thin film transistor arranged at an intersection of the gate line and the data line;
a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region;
a low reflection layer being arranged in the white pixel region; and
a light shield layer arranged opposite the thin film transistor and contacting the substrate.
2. The organic light emitting display device of claim 1 , wherein the low reflection layer is arranged on and physically contacting the pixel electrode.
3. The organic light emitting display device of claim 1 , wherein the low reflection layer is made of a same material as the light shield layer.
4. The organic light emitting display device of claim 1 , wherein the light shield layer comprises a four-layer film comprising:
a first metal layer;
a first oxide layer or a first nitride layer;
a second metal layer; and
a second oxide layer or a second nitride layer.
5. The organic light emitting display device of claim 1 , wherein the source electrode, the drain electrode, or the gate constituting the thin film transistor comprises a tri-layer film comprising:
a first oxide layer or a first nitride layer;
a first metal layer; and
a second oxide layer or a second nitride layer.
6. The organic light emitting display device of claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
a first oxide layer or a first nitride layer;
a first metal layer; and
a second oxide layer or a second nitride layer.
7. The organic light emitting display device of claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
a first oxide layer or a fist nitride layer;
a first metal layer; and
a semiconductor layer made of the same material as an active layer of the thin film transistor.
8. The organic light emitting display device of claim 1 , wherein the low reflection layer is disposed between the substrate and a buffer layer.
9. The organic light emitting display device of claim 1 , wherein the light shield layer is disposed between the substrate and a buffer layer.