IP Library › Granted Patent US 9,392,703
Granted Patent B2
US 9,392,703 · App. 14/303,790 · Granted Jul 12, 2016

Pad structure and mounted structure

Inventors: Masaki Sanada (Nagano, JP); Syota Miki (Nagano, JP)
Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
H05K3/4007H01L21/4853H01L23/49811H01L23/5384H01L24/16H01L24/81H01L25/0652H01L25/18H01L2224/131H01L2224/13082H01L2224/13144H01L2224/16146H01L2224/16225H01L2224/16227H01L2224/16238H01L2224/8182H01L2224/81191H01L2224/81444H01L2924/15192H01L2924/15311H05K1/113H05K3/3436H05K3/4015H05K2201/0338H05K2201/1053H05K2201/10515
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Quick Facts
Patent No.
US 9,392,703
App. No.
14/303,790
Granted
Jul 12, 2016
Kind
B2
Abstract

A pad structure includes an insulating layer; a first metal layer formed on one surface of the insulating layer and including an intermetallic compound layer of copper and tin or a tin layer; and a second metal layer formed on the first metal layer and including a gold layer.

Claims (18)

1. A pad structure comprising:

an insulating layer;

a barrier metal layer formed on the insulating layer and made of titanium;

a first metal layer formed on the barrier metal layer and including an intermetallic compound layer of Cu 3 Sn or Cu 6 Sn 5 ; and

a second metal layer formed on the first metal layer and composed of a nickel layer and a gold layer formed on the nickel layer,

wherein side surfaces of the barrier metal layer, the first metal layer, and the nickel layer and the gold layer of the second metal layer are substantially flush with each other.

2. The pad structure according to claim 1 ,

wherein the first metal layer further includes a tin layer provided between the intermetallic compound layer of Cu 3 Sn or Cu 6 Sn 5 , and the nickel layer of the second metal layer.

3. A mounted structure comprising:

an insulating layer;

a barrier metal layer formed on the insulating layer and made of titanium;

a first metal layer formed on the barrier metal layer and including an intermetallic compound layer of Cu 3 Sn or Cu 6 Sn 5 ;

a second metal layer formed on the first metal layer and composed of a nickel layer;

a solder layer connected on the second metal layer; and

a connecting portion connected on the solder layer,

wherein side surfaces of the barrier metal layer, the first metal layer, and the second metal layer of the second metal layer are substantially flush with each other.

4. The mounted structure according to claim 3 ,

wherein the first metal layer further includes an intermetallic compound layer of Ni 3 Sn 4 , Ni 3 Sn 2 or Ni 3 Sn provided between the intermetallic compound layer of Cu 3 Sn or Cu 6 Sn 5 , and the nickel layer of the second metal layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2014
From: SANADA, MASAKI; MIKI, SYOTA
To: SHINKO ELECTRIC INDUSTRIES CO., LTD.
Reel/Frame 033097/0695 →
Priority Claims (1)
JP 2013-132029 · Jun 24, 2013 · national
Continuity (1)
Related Publication 20140374149A1 · Dec 25, 2014