Package on package bonding structure and method for forming the same

1. A die package comprising:

a semiconductor die attached to a substrate having interconnect structures, wherein the semiconductor die is electrically connected to the interconnect structures; and

a first external connector adjacent to the semiconductor die, wherein the first external connector is electrically connected to the interconnect structures, wherein the first external connector is embedded in a molding compound interposed between the semiconductor die and the first external connector, wherein the first external connector comprises:

a first contact pad,

a metal ball with a convex surface, wherein the metal ball is bonded to the first contact pad, and

a solder paste layer over an upper surface of the metal ball, wherein an upper surface of the solder paste layer substantially conforms to the upper surface of the metal ball, and wherein the solder paste layer has a first portion above an upper surface of the molding compound and a second portion extending lower than the upper surface of the molding compound, wherein the solder paste layer has a first width at an interface between the solder paste layer and the upper surface of the molding compound, and a second width for the second portion of the solder paste layer, wherein the second width is larger than the first width.

2. The die package of claim 1 , wherein the molding compound is a molded underfill (MUF) interposed between the semiconductor die and the first external connector, and wherein the MUF extends into a gap between the semiconductor die and the substrate.

3. The die package of claim 1 , further comprising a bonding layer between the metal ball and the first contact pad.

4. The die package of claim 3 , wherein the bonding layer has a thickness in a range from about 0.5 μm to about 10 μm.

5. The die package of claim 1 , wherein a first intermetallic compound (IMC) layer is interposed between the metal ball and the solder paste layer, wherein the IMC layer is below the upper surface of the molding compound, and wherein a thickness of the first IMC layer is in a range from about 2 μm to about 5 μm.

6. The die package of claim 1 , wherein a second intermetallic compound (IMC) layer is interposed between the metal ball and the first contact pad, wherein a thickness of the second IMC layer is in a range from about 3 μM to about 8 μm.

7. The die package of claim 1 , wherein a distance from a top surface of the metal ball to the upper surface of the molding compound is between about 150 μm and about 200 μm.

8. The die package of claim 1 , wherein a top surface of the solder paste layer is above the upper surface of the molding compound at a distance from about 150 μm to about 200 μm.

9. The die package of claim 1 , further comprising a second external connector adjacent to the first external connector, wherein a pitch between the first external connector and the second external connector is in a range from about 150 μm to about 250 μm.

10. A package on package (PoP) structure, comprising:

a first die package having a first external connector adjacent to a first semiconductor die, wherein both the first external connector and the first semiconductor die are electrically connected to interconnect structures in a substrate, wherein both the first external connector and the first semiconductor die are disposed over the substrate and are embedded in a molding compound, and wherein the first external connector comprises:

a first contact pad; and

a metal ball with a convex surface, wherein the metal ball is bonded to the first contact pad; and

a second die package over the first die package, wherein the second die package has a second contact pad on a lower surface of the second die package, wherein a bonded solder layer is interposed between the second contact pad and the metal ball, wherein the bonded solder layer contacts and extends below an upper surface of the molding compound distal the substrate, wherein the bonded solder layer has a first width measured at the upper surface of the molding compound and a second width measured between the upper surface of the molding compound and the substrate, the first width being smaller than the second width.

11. The PoP structure of claim 10 , further comprising a first intermetallic compound (IMC) layer between the bonded solder layer and the metal ball, wherein the first IMC layer is below an upper surface of the molding compound.

12. The PoP structure of claim 10 , further comprising a second external connector between the second contact pad and the bonded solder layer.

13. The PoP structure of claim 10 , further comprising a second intermetallic compound (IMC) layer between the metal ball and the first contact pad.

14. The PoP structure of claim 10 , wherein the bonded solder layer has a thickness in a range from about 80 μm to about 130 μm.

15. The PoP structure of claim 10 , wherein a distance between the molding compound and the second die package is in a range from about 30 μm to about 80 μm.

16. The PoP structure of claim 10 , wherein an upper surface of the metal ball is below the upper surface of the molding compound, and wherein a distance between the upper surface of the metal ball and the upper surface of the molding compound is in a range from about 50 μm to about 200 μm.

17. A package on package (PoP) structure, comprising:

a first die package comprising:

a substrate with interconnect structures;

a semiconductor die attached to the substrate and electrically coupled to the interconnect structures;

a first contact pad on a first side of the substrate and electrically coupled to the interconnect structures;

a metal ball with a convex surface attached to the first contact pad; and

a molding compound over the first side of the substrate, the molding compound interposed between the semiconductor die and the metal ball, and upper surface of the molding compound extending further away from the substrate than an upper surface of the metal ball;

a second die package with a second contact pad; and

a bonder solder layer between the second contact pad of the second die package and the metal ball of the first die package, the bonded solder layer contacting and extending below the upper surface of the molding compound, the bonded solder layer having a first width at the upper surface of the molding compound and a second width below the upper surface of the molding compound, the second width continuously increasing as the bonded solder layer extends further below the upper surface of the molding compound.

18. The PoP structure of claim 17 , wherein a lower surface of the bonded solder layer extends below the upper surface of the molding compound and extends conformally over the upper surface of the metal ball.

19. The PoP structure of claim 17 , further comprising a first intermetallic compound (IMC) layer between the bonded solder layer and the metal ball.

20. The PoP structure of claim 17 , further comprising a second intermetallic compound (IMC) layer between the metal ball and the first contact pad.