Diffusion-controlled oxygen depletion of semiconductor contact interface
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.
1. A method of forming a contact, the method comprising:
forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate;
creating an opening through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region;
forming a metal stack within the opening, the metal stack including at least a first metal film on the silicon-containing region and a second metal film on the first metal film;
annealing the metal stack to cause oxygen to migrate from the substrate to the second metal film by using a forming gas anneal that is performed:
in an atmosphere at least partially composed of nitrogen gas and hydrogen gas;
at a temperature of at least 350° C.; and
for at least 30 minutes;
forming a first liner within the opening; and
depositing a fill metal in the opening.
2. A method of forming a contact, the method comprising:
forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate;
creating an opening through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region;
forming, on the exposed silicon-containing region of the semiconductor substrate and through the exposure of the silicon-containing region, a silicon-dioxide layer;
forming a metal stack within the opening, the metal stack including at least a first metal film on the silicon-containing region and a second metal film on the first metal film, wherein the first metal film is about 4 nm in thickness and predominantly titanium, and the second metal film is about 4 nm in thickness and about 50% titanium and about 50% aluminum;
annealing the metal stack to cause oxygen to migrate from the silicon-dioxide layer of the substrate to the second metal film, wherein the annealing forms a gettering-metal oxide in an upper portion of the metal stack;
forming a first liner within the opening;
removing the first liner and the upper portion of the metal stack;
forming a second liner; and
depositing a fill metal on the second liner within the opening.