Organic photonic device
The invention relates to a transparent substrate for an organic light-emitting device comprising an electrode-bearing carrier, said electrode consisting in a multilayer comprising at least, in order starting from the substrate, a first dielectric layer (D 1 ), a first conduction metal layer (M 1 ), a second dielectric layer (D 2 ), a second conduction metal layer (M 2 ), and a third dielectric layer (D 3 ), the conduction metal layers (M) in the electrode ( 11 ) being two in number, and the third dielectric layer (D 3 ) not comprising an indium-oxide-based layer. It is characterised in that the geometric thickness of the second dielectric layer (D 2 ) is at least 65 nm and the geometric thickness of the first conduction metal layer (M 1 ) is at least 8.5 nm.
1. A transparent substrate comprising:
a support carrying an electrode which transmits light from a light emitter disposed on an opposite side of the electrode from the support, said electrode having a stack of layers comprising, in order starting from the substrate, a first dielectric layer, a first metallic conduction layer, a second dielectric layer, a second metallic conduction layer, and a third dielectric layer,
wherein
the number of metallic conduction layers in the electrode is two, and the third dielectric layer does not comprise a layer based on indium oxide,
and wherein a geometric thickness of the second dielectric layer is at least 65 nm and a geometric thickness of the first metallic conduction layer is at least 8.5 nm, and
a geometric thickness of the third dielectric layer is less than 20 nm.
2. The transparent substrate according to claim 1 , wherein the geometric thickness of the second dielectric layer is less than 90 nm.
3. The transparent substrate according to claim 1 , wherein the geometric thickness of the first metallic conduction layer is less than 13 nm.
4. The transparent substrate according to claim 1 , wherein the geometric thickness of the second dielectric layer, Tk.D 2 , and the geometric thickness of the first metallic conduction layer, Tk.M 1 , satisfy the following equation:
Tk.M 1≧−6.266386+0.1869915* Tk.D 2+0.0123539*( Tk.D 2−83.45) 2 −0.0001814*( Tk.D 2−83.45) 3 .
5. The transparent substrate according to claim 1 , wherein a ratio of the geometric thickness of the second dielectric layer to a geometric thickness of the first dielectric layer, Tk.D 2 /Tk.D 1 , is at least 1.90.
6. The transparent substrate according to claim 1 , wherein a geometric thickness of the first dielectric layer, Tk.D 1 , is at least 54 nm.
7. The transparent substrate according to claim 1 , wherein a geometric thickness of the third dielectric layer is between 5 and 18 nm.
8. The transparent substrate according to claim 1 , wherein the metallic conduction layers of the electrode comprise silver.
9. The transparent substrate according to claim 1 , wherein a total geometric thickness of the two metallic conduction layers of the electrode, Tk.M 1 +Tk.M 2 , is less than 30.0 nm.
10. The transparent substrate according to claim 1 , wherein the dielectric layers of the electrode comprise a compound with a refractive index of between 1.6 and 2.5 at a wavelength of 550 nm.
11. The transparent substrate according to claim 1 , wherein the dielectric layers of the electrode comprise a compound selected from the group consisting of oxides of zinc, oxides of tin, oxides of titanium, nitrides of aluminum, nitrides of silicon, zinc-tin mixed oxides, titanium-zirconium-yttrium mixed oxides and mixtures thereof.
12. The transparent substrate according to claim 1 , with the proviso that none of the dielectric layers comprise a layer based on indium oxide.
13. An organic electroluminescent device comprising the transparent substrate according to claim 1 and an OLED system emitting white light adjacent to the electrode of the transparent substrate.
14. The organic electroluminescent device according to claim 13 , wherein it has a luminance equivalent to at least 85% of the luminance of the same OLED device optimized with an electrode of ITO having a geometric thickness of 120 nm and a resistance per square of 12Ω/□ (±0.5Ω/□), a CRI above 70 and a color Delta below 2.0.