Method for producing highly conformal transparent conducting oxides
A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.
1. A method of forming a transparent conducting oxide layer having a desired set of properties, comprising the steps of:
providing an atomic layer deposition system;
providing a substrate disposed in the atomic layer deposition system;
inputting a precursor consisting essentially of trimethyl indium to the atomic layer deposition system;
inputting ozone to the atomic layer deposition system;
depositing In 2 O 3 ;
depositing a dopant using a precursor selected from the group consisting of tetrakis-(dimethylamino) tin and diethyl zinc; and
forming a deposited layer on the substrate comprising In 2 O 3 and the dopant, wherein the deposited layer has the desired set of properties;
where temperature is controlled during deposition in a temperature range between 100° C. to 150° C. and the deposited layer is formed at a growth rate greater than 0.4 Å/cycle.
2. The method as defined in claim 1 wherein the precursor and the ozone are input in a pulsed manner.
3. The method as defined in claim 2 further including pulses of a gas in a purging step.
4. The method as defined in claim 1 wherein the dopant is selected from the group of SnO and ZnO.
5. The method as defined in claim 4 wherein depositing the dopant comprises inputting tetrakis-(dimethylamino) tin and inputting ozone to the atomic layer deposition system for depositing the dopant.
6. The method as defined in claim 1 wherein the deposited layer has a structure selected from the group of amorphous, crystalline and mixtures thereof.