Organic light emitting display device and fabricating method thereof
Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.
1. A method of fabricating an organic light emitting diode display device, the method comprising:
sequentially forming a first metal film, an insulation film and a second metal film on a substrate;
forming a photosensitive film pattern having different thickness portions on the second metal film through a mask procedure, wherein the photosensitive film pattern is formed opposite a storage capacitor region, a pixel region and a pad region;
forming a first storage electrode, an insulation film pattern and a metal film pattern by sequentially etching the second metal film, the insulation film and the first metal film using the first photosensitive film pattern as a mask;
forming a second photosensitive film pattern by performing an ashing process on the first photosensitive film pattern;
forming a storage capacitor configured with the first storage electrode, a second insulation film pattern and a second storage electrode by etching the first insulation film pattern and the metal film pattern using the second photosensitive film pattern as a mask;
forming a switching transistor and a driving transistor, each including a channel layer, a gate electrode, a source electrode and a drain electrode, on the substrate provided with the storage capacitor;
forming a color filter in the pixel region of the substrate provided with the switching and driving transistors and the storage capacitor; and
forming an organic light emitting diode, which includes a first electrode, an organic emission layer and a second electrode, in the pixel region of the substrate provided with the color filter.
2. The method of claim 1 , wherein the first photosensitive film pattern is formed using one of a diffractive mask and a halftone mask.
3. The method of claim 1 , wherein the first storage electrode, the second insulation film pattern and the second storage electrode included in the storage capacitor are expanded from the storage capacitor region up to the pixel region and the pad region.
4. The method of claim 1 , wherein the first metal film and the second metal film are a transparent conductive material.
5. The method of claim 1 , wherein the first metal film and the second metal film are one of indium-tin-oxide ITO, indium-zinc-oxide IZO and indium-tin-zinc-oxide ITZO.
6. The method of claim 1 , wherein the second insulation film pattern of the storage capacitor is one of a silicon nitride SiNx and silicon oxide SiOx.
7. The method of claim 1 , wherein the second insulation film pattern of the storage capacitor is a multi-layered structure formed by alternately depositing a silicon nitride SiNx and a silicon oxide SiOx.
8. The method of claim 1 , wherein the organic emission layer includes a white emission layer that emits white light.
9. The method of claim 8 , wherein the white emission layer is formed by stacking red, green and blue organic materials.