Specific deep brain stimulation for enhancement of memory

1. A method of site-specific deep brain stimulation for enhancement of memory, the method comprising:

implanting intracranial depth electrodes in a patient, wherein the electrodes are placed selectively in right and/or left entorhinal regions, wherein the entorhinal region includes an entorhinal cortex and a perforant path and at least one electrode contact is within the perforant path,

determining an individualized threshold for eliciting an after-discharge threshold of the patient, and

stimulating the electrodes with current set below the after-discharge threshold so as to localize stimulation of the right and/or left entorhinal regions and enhance memory of the patient.

2. The method of claim 1 , wherein the implanting the electrodes further comprises implanting at least one hippocampal electrode.

3. The method of claim 1 , wherein the stimulating the electrodes is on-demand.

4. The method of claim 1 , wherein the stimulating the electrodes is continuous.

5. The method of claim 1 , wherein the stimulating the electrodes is intermittent.

6. The method of claim 1 , wherein the stimulating the electrodes is performed during a particular phase of information processing by the patient.

7. The method of claim 1 , wherein the stimulating the electrodes is performed while the patient is conducting a cognitive task and/or in particular stage of information processing, and/or in particular phase of sleep.

8. The method of claim 1 , wherein the current is regulated, charge-balanced, with biphasic rectangular pulses.

9. The method of claim 1 , wherein the stimulating current ranges from approximately 1.0 mA-2.0 mA.

10. The method of claim 1 , wherein the electrodes are placed selectively in white and/or gray matter of the right and/or left entorhinal regions.

11. The method of claim 1 , wherein the current is set 20-25 percent below the after-discharge threshold.

12. A method of site-specific deep brain stimulation for enhancement of memory, the method comprising:

implanting intracranial depth electrodes in a patient, wherein the electrodes are placed selectively at a specific brain site in medial temporal lobe and at least one electrode contact is within perforant path;

determining a threshold for eliciting an after-discharge threshold of the patient; and

stimulating the electrodes at the specific brain site below the after-discharge threshold so as to localize stimulation of the specific brain site at specific stages of information processing by the patient to enhance memory of the information processing.

13. The method of claim 12 , further comprising real time electroencephalographic (EEG) feedback recorded by the DBS device to optimize therapeutic efficacy.

14. The method of claim 12 , wherein the stimulation is on-demand.

15. The method of claim 12 , wherein the stimulation is timed.

16. The method of claim 12 , wherein the stage of information processing is the stage of learning.

17. The method of claim 12 , wherein the stage of information processing is the stage of retrieval of information, recall and consolidation.

18. The method of claim 12 , wherein the stimulation at a specific brain site is at the entorhinal region, including the entorhinal cortex and the perforant path.

19. The method of claim 12 , wherein the real time EEG feedback recorded includes theta rhythm in the hippocampus or in entorhinal cortex at one or more of the electrode contacts.

20. The method of claim 12 , wherein the electrodes are placed selectively in white and/or gray matter of the specific brain site.

21. The method of claim 12 , wherein the electrodes are stimulated at 20-25percent below the after-discharge threshold.