Semiconductor memory device and method of controlling semiconductor memory device

1. A semiconductor memory device, comprising:

a memory cell;

a reference cell;

a first current source configured to cause a first current to flow through the memory cell;

a second current source configured to cause a second current having an amount thereof being variable to flow through the reference cell;

a sense amplifier configured to compare a voltage responsive to a voltage drop across the memory cell with a voltage responsive to a voltage drop across the reference cell; and

a current-amount setting circuit configured to determine the amount of the second current,

wherein the current-amount setting circuit determines the amount of the second current such that the voltage drop across the reference cell is set equal to a midpoint between the voltage drop across the memory cell having a data value of “0” stored therein and the voltage drop across the memory cell having a data value of “1” stored therein, and

wherein the second current source includes a plurality of MOS transistors connected in parallel to each other and each series-connected to the reference cell, wherein the amount of the second current is determined in response to a number of one or more MOS transistors that are placed in a conductive state among the plurality of MOS transistors.

2. The semiconductor memory device as claimed in claim 1 , wherein the current-amount setting circuit is a nonvolatile resister, which has data stored therein that specifies the one or more MOS transistors that are placed in the conductive state among the plurality of MOS transistors.

3. The semiconductor memory device as claimed in claim 1 , wherein each of the memory cell and the reference cell is a spin-transfer torque magnetoresistive random access memory including a magnetic tunnel junction device.

4. The semiconductor memory device as claimed in claim 3 , wherein the magnetic tunnel junction device of the reference cell has an area size larger than that of the magnetic tunnel junction device of the memory cell, and is placed in a high-resistance state.

5. A method of controlling a semiconductor memory device, comprising:

causing a first current to flow through a memory cell;

causing a second current to flow through a reference cell;

comparing a voltage responsive to a voltage drop across the memory cell with a voltage responsive to a voltage drop across the reference cell;

adjusting an amount of the second current in response to a result of the comparing; and

storing data indicative of the adjusted amount in a nonvolatile resister,

wherein the adjusting an amount of the second current includes adjusting a number of MOS transistors placed in a conductive state among a plurality of MOS transistors that are connected in parallel to each other and series-connected to the reference cell.