Non-volatile memory device
According to one embodiment, a non-volatile memory device includes a plurality of electrodes, at least one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film contacts the conductive layers, and extends in the first direction along the semiconductor layer between the conductive layers and the semiconductor layer. The second insulating film is provided between the first insulating film and the semiconductor layer. The first insulating film includes a first portion located between the conductive layers and the second insulating film, and a second portion located between the interlayer insulating film and the second insulating film.
1. A non-volatile semiconductor storage device, comprising:
a stacked structural unit including a plurality of electrode films stacked in a first direction, the plurality of electrode films including a first electrode film, a second electrode film and a first inter-layer insulating film provided between the first electrode film and the second electrode film;
a silicon pillar extending through the stacked structural unit in the first direction;
a first insulating film provided between the first electrode film and the silicon pillar;
a second insulating film provided between the second electrode film and the silicon pillar;
a first silicon film provided between the first insulating film and the silicon pillar;
a second silicon film provided between the second insulating film and the silicon pillar;
a tunnel insulating film including parts provided between the first silicon film and the silicon pillar, and between the second silicon film and the silicon pillar.
2. The non-volatile semiconductor storage device according to claim 1 , wherein the first silicon film overlaps the first insulating film when being viewed along the first direction.
3. The non-volatile semiconductor storage device according to claim 1 , wherein the first silicon film overlaps the first insulating film and the first inter-layer insulating film when being viewed along the first direction.
4. The non-volatile semiconductor storage device according to claim 1 , wherein the first insulating film covers an upper surface of the first silicon film and a lower surface of the first silicon film.
5. The non-volatile semiconductor storage device according to claim 1 , wherein a length of the first silicon film in the first direction is larger than a length of the first electrode film in the first direction.
6. The non-volatile semiconductor storage device according to claim 2 , wherein a length of the first insulating film in the first direction is larger than a length of the first electrode film in the first direction.
7. The non-volatile semiconductor storage device according to claim 1 , wherein a length of the first insulating film in the first direction is substantially the same as a length of the first silicon film in the first direction.
8. The non-volatile semiconductor storage device according to claim 1 , wherein a length of the first silicon film in a second direction at an upper position of the first silicon film is shorter than a length of the first silicon film in the second direction at a middle position of the first silicon film, the second direction crossing the first direction.
9. The non-volatile semiconductor storage device according to claim 1 , wherein the first insulating film is a silicon oxide film.
10. The non-volatile semiconductor storage device according to claim 1 , further comprising a third insulating film provided between the first insulating film and the first electrode, the third insulating film having a portion provided along a second direction, the second direction being a direction along a top or bottom surface of the first electrode film.
11. The non-volatile semiconductor storage device according to claim 10 , wherein the portion of the third insulating film is provided on the first electrode film.