Integrated broadband quantum cascade laser
A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.
1. A monolithic quantum cascade (QC) laser structure, comprising:
a plurality of QC active region layers formed with a common material, where each of the QC active region layers has a different thickness;
a plurality of cladding layers vertically interleaved with the plurality of QC active region layers such that the plurality of cladding layers and the plurality of QC active region layers are individually alternating and a pair of the plurality of cladding layers bound each of the plurality of QC active region layers; and
a substrate layer supporting and contacting a lowest one of the plurality of cladding layers;
wherein each of the QC active region layers bounded by the pair of the plurality of cladding layers is etched to laterally isolate an QC active region layer portion between an upper bounding cladding layer portion and a lower bounding cladding layer to form a separately addressable one of a plurality of QC lasers.
2. The apparatus of claim 1 , wherein the common material of the plurality of QC active region layers comprises a superlattice semiconductor material.
3. The apparatus of claim 1 , wherein an index of refraction of the QC active region layer portion is greater than that of the upper bounding cladding layer portion and the lower bounding cladding layer for each of the plurality of QC lasers.
4. The apparatus of claim 1 , wherein emission from each separately addressable one of the plurality of QC lasers is activated by applying an independent voltage between an upper contact on the upper bounding cladding layer portion and a lower contact on the lower bounding cladding layer.
5. The apparatus of claim 1 , wherein the different thickness of each of the QC active region layers determines a distinct emission wavelength for the separately addressable one of a plurality of QC lasers.
6. The apparatus of claim 5 , wherein each separately addressable one of the plurality of QC lasers yields less than a 5 micron bandwidth.
7. The apparatus of claim 5 , wherein the distinct emission wavelength for all of the plurality of QC lasers is multiplexed together to yield a broadband emission.
8. The apparatus of claim 7 , wherein the broadband emission comprises greater than 15 micron bandwidth.
9. The apparatus of claim 5 , wherein each of the QC active region layers are disposed such that the different thickness is greater than that of any of the plurality of QC active region layers below.
10. A method of forming a monolithic quantum cascade (QC) laser structure, comprising the steps of:
growing a plurality of QC active region layers with a common material, where each of the QC active region layers has a different thickness;
growing a plurality of cladding layers vertically interleaved with the plurality of QC active region layers such that the plurality of cladding layers and the plurality of QC active region layers are individually alternating and a pair of the plurality of cladding layers bound each of the plurality of QC active region layers;
providing a substrate layer supporting and contacting a lowest one of the plurality of cladding layers; and
etching each of the QC active region layers bounded by the pair of the plurality of cladding layers to laterally isolate an QC active region layer portion between an upper bounding cladding layer portion and a lower bounding cladding layer to form a separately addressable one of a plurality of QC lasers.
11. The method of claim 10 , wherein the common material of the plurality of QC active region layers comprises a superlattice semiconductor material.
12. The method of claim 10 , wherein an index of refraction of the QC active region layer portion is greater than that of the upper hounding cladding layer portion and the lower bounding cladding layer for each of the plurality of QC lasers.
13. The method of claim 10 , wherein emission from each separately addressable one of the plurality of QC lasers is activated by applying an independent voltage between an upper contact on the upper bounding cladding layer portion and a lower contact on the lower bounding cladding layer.
14. The method of claim 10 , wherein the different thickness of each of the QC active region layers determines a distinct emission wavelength for the separately addressable one of a plurality of OC lasers.
15. The method of claim 14 , wherein each separately addressable one of a plurality of QC lasers yields less than a 5 micron bandwidth.
16. The method of claim 14 , wherein the distinct emission wavelength for all of the plurality of QC lasers is multiplexed together to yield a broadband emission.
17. The method of claim 16 , wherein the broadband emission comprises greater than 15 micron bandwidth.
18. The method of claim 14 , wherein each of the QC active region layers are disposed such that the different thickness is greater than that of any of the plurality of QC active region layers below.