Semiconductor device having barrier metal layer
According to one embodiment, a semiconductor device having an interlayer insulating film, a molybdenum containing layer, a barrier metal layer and a plug material layer is provided. The interlayer insulating film is formed on a substrate or on a conductive layer formed on a substrate. The interlayer insulating film has a hole reaching the substrate or the conductive layer. The molybdenum containing layer is formed in the substrate or in the conductive layer at a bottom portion of the hole. The barrier metal layer is formed on the molybdenum containing layer and on a side surface of the hole. A portion of the barrier metal layer is formed on the side surface contains at least molybdenum. A portion of the barrier metal layer is formed on the molybdenum containing layer includes at least a molybdenum silicate nitride film. The plug material layer is formed via the barrier metal layer.
1. A semiconductor device comprising:
an interlayer insulating film which is formed on a substrate or on a conductive layer containing silicon formed on a substrate, the interlayer insulating film having a hole reaching the substrate or the conductive layer;
a molybdenum containing layer formed on the substrate or in the conductive layer at a bottom portion of the hole;
a barrier metal layer formed on the molybdenum containing layer and on a side surface of the hole, a portion of the barrier metal layer formed on the side surface containing at least molybdenum, a portion of the barrier metal layer formed on the molybdenum containing layer including at least a molybdenum silicate nitride film; and
a plug material layer formed in the hole through the barrier metal layer.
2. A semiconductor device comprising:
an interlayer insulating film which is formed on a substrate containing silicon or on a conductive layer containing silicon formed on a substrate and, the interlayer insulating film having a hole reaching the substrate or the conductive layer;
a barrier metal layer formed on a bottom portion and a side surface of the hole, a first portion of the barrier metal layer formed on the side surface containing at least molybdenum, a second portion of the barrier metal layer formed on the bottom portion containing at least molybdenum and silicon;
a plug material layer formed in the hole through the barrier metal layer; and
a molybdenum containing layer formed on the substrate or in the conductive layer at a bottom portion of the hole so as to be in contact with the second portion of the barrier metal layer.
3. The semiconductor device according to claim 2 , wherein the second portion of the barrier metal layer includes a molybdenum silicate nitride film.
4. The semiconductor device according to claim 3 , wherein the molybdenum silicate nitride film is formed on the bottom portion and on a portion of the side surface of the hole.
5. The semiconductor device according to claim 2 , wherein the plug material layer contains at least any one of molybdenum, copper, aluminum, tungsten, ruthenium, or tantalum.
6. The semiconductor device according to claim 2 , further comprising a wiring layer which is formed on the plug material layer and the interlayer insulating film, and is formed of the same material as that of the plug material layer is further included.
7. The semiconductor device according to claim 3 , wherein the first portion of the barrier metal layer includes a molybdenum oxynitride film.
8. The semiconductor device according to claim 3 , wherein the molybdenum containing layer is a molybdenum silicide layer.
9. The semiconductor device according to claim 7 , wherein the first portion of the barrier metal layer includes a molybdenum oxynitride film and molybdenum oxide film.