IP Library › Granted Patent US 9,416,013
Granted Patent B2
US 9,416,013 · App. 14/612,002 · Granted Aug 16, 2016

Rapid reduction of sodium occupancy in type II silicon clathrate by chemical etching

Inventors: Lakshmi Krishna (Golden, CO); Eric Toberer (Golden, CO); Adele Tamboli (Golden, CO)
Assignee: Colorado School of Mines
C01B33/021C01B33/037H01L35/22
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Quick Facts
Patent No.
US 9,416,013
App. No.
14/612,002
Granted
Aug 16, 2016
Kind
B2
Abstract

The invention relates to a method to produce a type II silicon clathrate, a method to produce a type I clathrate, and a method to decrease sodium in silicon clathrates.

Claims (17)

1. A method to produce a type II silicon clathrate, comprising:

heating NaH powder and Si powder for a heating time between about 24 hours to about 72 hours at a heating temperature between about 350° C. and about 450° C. in the absence of oxygen;

milling the NaH powder and the Si powder;

mixing the milled NaH powder and milled Si powder to produce NaSi powder;

annealing the NaSi powder for an annealing time between about 1 hour and about 24 hours at an annealing temperature of between about 200° C. and about 300° C. to produce annealed NaSi powder; and

thermally decomposing the NaSi powder in a chamber, wherein the chamber comprises a cold plate, wherein the temperature of the cold plate is less than a melting point of sodium, wherein the chamber is maintained at a decomposition temperature between about 300° C. and about 400° C., and wherein a pressure in the chamber is between about 0.5 mTorr and about 5 mTorr to produce a product, wherein a phase fraction of the product comprises greater than about 80 wt. % of the type II silicon clathrate.

2. The method of claim 1 , wherein the decomposition temperature is about 370° C.

3. The method of claim 1 , further comprising providing sodium powder to the chamber.

4. The method of claim 1 , wherein the temperature of the cold plate is about 25° C.

5. The method of claim 1 , wherein the phase fraction of the product further comprises between about 3 wt. % to about 10 wt. % of a type I silicon clathrate, between about 2 wt. % to about 10 wt. % of silicon, and between about 0 wt. % to about 10 wt. % of sodium.

6. The method of claim 1 , further comprising decreasing a weight percentage of sodium in the product, comprising:

rinsing the product with an alcohol;

etching the product in the presence of an acid solution to produce a slurry; and

filtering the slurry.

7. The method of claim 6 , wherein the alcohol is ethanol.

8. The method of claim 6 , wherein the acid solution comprises hydrofluoric acid and nitric acid.

9. The method of claim 8 , wherein the acid solution comprises between about 1 vol. % to about 5 vol. % of the hydrofluoric acid and between about 5 vol. % to about 15 wt. % of HNO 3 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2016
From: KRISHNA, LAKSHMI; TOBERER, ERIC; TAMBOLI, ADELE
To: COLORADO SCHOOL OF MINES
Reel/Frame 037885/0952 →
Continuity (2)
Provisional Application 61934024 · Jan 31, 2014
Related Publication 20150376016A1 · Dec 31, 2015