Methods for fabricating conductive vias of circuit structures
Methods and structures for fabricating conductive vias in circuit structures are provided. Methods may include, for example, providing a substrate that includes a dopant and at least one trench formed in the substrate; providing an undoped semiconductor layer over a surface of the substrate within the trench; and providing a conductive material on top of dielectric layer in the trench, the conductive material forming the conductive via. The undoped semiconductor layer, having no dopant, reduces a parasitic capacitance between the conductive via and the substrate. The undoped semiconductor layer may also prevent migration of dopant from the substrate into the undoped semiconductor layer, further reducing capacitance in the circuit structure.
1. A method comprising:
facilitating fabricating a conductive via of a circuit structure, the facilitating fabricating comprising:
providing a semiconductor substrate comprising a dopant and at least one trench formed in the substrate;
providing an undoped semiconductor layer over a surface of the semiconductor substrate within the trench; and
providing a conductive material in the trench, the conductive via comprising the conductive material, wherein the undoped semiconductor layer inhibits flow of electrical carriers into the undoped semiconductor layer to thereby reduce a capacitance between the conductive via and the substrate.
2. The method of claim 1 wherein the trench is a through-silicon via trench, and wherein the conductive via comprises a through-silicon via.
3. The method of claim 1 , wherein providing the undoped semiconductor layer comprises epitaxially growing the undoped semiconductor layer over the surface of the substrate within the trench.
4. The method of claim 3 , wherein the undoped semiconductor layer comprises undoped silicon.
5. The method of claim 3 , wherein the undoped semiconductor layer comprises a material selected to facilitate preventing migration of the dopant from the substrate into or through the undoped semiconductor layer.
6. The method of claim 5 , wherein the undoped semiconductor layer comprises silicon-germanium.
7. The method of claim 5 , wherein the undoped semiconductor layer comprises silicon-carbide.
8. The method of claim 5 , wherein the undoped semiconductor layer comprises silicon-germanium-carbide.
9. The method of claim 5 , wherein the undoped semiconductor layer is a first undoped semiconductor layer, the method further comprising providing a second undoped semiconductor layer over the first undoped semiconductor layer.
10. The method of claim 9 , wherein the second undoped semiconductor layer comprises undoped silicon.
11. The method of claim 3 , wherein the epitaxially growing comprises epitaxially growing the undoped semiconductor layer at a temperature of about 500° C. or less.
12. The method of claim 1 , further comprising providing one or more dielectric layers over the undoped semiconductor layer prior to providing the conductive material in the trench.
13. A structure comprising:
a circuit structure, the circuit structure comprising:
a semiconductor substrate comprising a dopant and at least one trench formed in the substrate;
an undoped semiconductor layer over a surface of the substrate within the trench; and
a conductive material in the trench, wherein the undoped semiconductor layer increases the depletion layer width of the undoped semiconductor layer to thereby reduce a capacitance between the conductive material and the semiconductor substrate.
14. The structure of claim 13 , wherein the undoped semiconductor layer comprises undoped silicon.
15. The structure of claim 13 , wherein the undoped semiconductor layer comprises a material selected to facilitate preventing migration of the dopant from the semiconductor substrate into or through the undoped semiconductor layer.
16. The structure of claim 15 , wherein the undoped semiconductor layer comprises silicon-germanium.
17. The structure of claim 15 , wherein the undoped semiconductor layer comprises silicon-carbide.
18. The structure of claim 15 , wherein the undoped semiconductor layer comprises silicon-germanium-carbide.
19. The structure of claim 18 , wherein the second undoped semiconductor layer comprises undoped silicon.
20. The structure of claim 15 , wherein the undoped semiconductor layer is a first undoped semiconductor layer, and the structure further comprises a second undoped semiconductor layer over the first undoped semiconductor layer.