Compound semiconductor device and method of manufacturing the same
A compound semiconductor device includes: a compound semiconductor layered structure; a gate electrode formed above the compound semiconductor layered structure; a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; a second protective insulating film that covers the gate electrode on the first protective insulating film and is made of silicon oxide as a material; and a third protective insulating film that contains silicon oxynitride and is formed between the first protective insulating film and the second protective insulating film.
1. A compound semiconductor device, comprising:
a compound semiconductor layered structure;
an electrode formed above the compound semiconductor layered structure, the electrode having a top surface opposite the compound semiconductor layered structure, the top surface extending from a first side surface of the electrode to a second side surface of the electrode; and
a first protective insulating film over a surface of the compound semiconductor layered structure; wherein
a recess is formed through the first protective insulating film, and a portion of the electrode is in the recess;
a first portion of the electrode is formed on the first protective insulating film, the first portion including the first side surface of the electrode;
the first protective insulating film includes a first region which is beneath the first portion of the electrode, the first region having a first thickness; and
the first protective insulating film includes a second region where the first portion of the electrode is not over the first protective insulating film, the second region having a second thickness, wherein
an upper surface of the first protective insulating film includes a step having a side surface that is coplanar to the first side surface of the electrode, and wherein the first thickness is larger than the second thickness.
2. The compound semiconductor device according to claim 1 , further comprising a second protective insulating film that covers the electrode and is on the first protective insulating film, and a third protective insulating film that is formed between the first protective insulating film and the second protective insulating film.
3. The compound semiconductor device according to claim 1 ,
wherein a difference between the first thickness and the second thickness is a value within a range of 10 nm to about 200 nm.
4. The compound semiconductor device according to claim 2 ,
wherein a difference between the first thickness and the second thickness is larger than a thickness of the third protective insulating film.
5. The compound semiconductor device according to claim 1 ,
wherein the electrode includes a gate electrode and a field plate electrode arranged away from and side by side with the gate electrode.
6. The compound semiconductor device according to claim 2 ,
wherein the third protective insulating film has a thickness within a range of 1 nm to 10 nm.
7. The compound semiconductor device according to claim 1 , further comprising a gate insulating film formed in the recess between the electrode and the compound semiconductor layered structure.
8. A power supply circuit comprising a transformer, and a high-voltage circuit and a low-voltage circuit across the transformer,
the high-voltage circuit comprising a transistor,
the transistor comprising:
a compound semiconductor layered structure;
an electrode formed above the compound semiconductor layered structure, the electrode having a top surface opposite the compound semiconductor layered structure, the top surface extending from a first side surface of the electrode to a second side surface of the electrode; and
a first protective insulating film that covers a surface of the compound semiconductor layered structure and is made of silicon nitride as a material; wherein
a recess is formed through the first protective insulating film, and a portion of the electrode is in the recess;
a first portion of the electrode is formed on the first protective insulating film, the first portion including the first side surface of the electrode;
the first protective insulating film includes a first region which is beneath the first portion of the electrode, the first region having a first thickness; and
the first protective insulating film includes a second where the first portion of the electrode is not over the first protective insulating film, the second region having a second thickness, wherein
an upper surface of the first protective insulating film includes a step having a side surface that is coplanar to the first side surface of the electrode, and wherein the first thickness is larger than the second thickness.
9. The compound semiconductor device according to claim 2 , wherein the third protective insulating film comprises silicon oxynitride.
10. The power supply circuit according to claim 8 , wherein the transistor further comprises a gate insulating film formed in the recess between the electrode and the compound semiconductor layered structure.