Power converter including integrated driver for depletion mode group III-V transistor
In one implementation, a power converter includes an output stage integrated circuit (IC) on a group III-V die, and a driver IC for driving the output stage IC, the driver IC fabricated on a group IV die. The power converter also includes a composite power switch split between the group III-V die and the group IV die, wherein a depletion mode group III-V transistor of the composite power switch is monolithically integrated in the group III-V die, and a group IV control switch of the composite power switch is monolithically integrated in the group IV die. As a result, the depletion mode group III-V transistor may be operated as an enhancement mode transistor.
1. A power converter comprising:
an output stage integrated circuit (IC) on a group III-V die,
a driver IC for driving said output stage IC, said driver IC fabricated on a group IV die;
a composite power switch split between said group III-V die and said group IV die, wherein a depletion mode group III-V transistor of said composite power switch is monolithically integrated in said group III-V die, and a group IV control switch of said composite power switch is monolithically integrated in said group IV die;
said depletion mode group III-V transistor being operated as an enhancement mode transistor.
2. The power converter of claim 1 , wherein said group III-V die comprises a III-Nitride die.
3. The power converter of claim 1 , wherein said group IV die comprises a silicon die.
4. The power converter of claim 1 , wherein said group IV control switch is a low voltage (LV) switch.
5. The power converter of claim 1 , wherein said group IV control switch comprises a silicon field-effect transistor (FET).
6. The power converter of claim 1 , wherein said depletion mode group III-V transistor comprises a depletion mode III-Nitride FET.
7. The power converter of claim 1 , wherein said depletion mode group III-V transistor is selected from the group consisting of a midvoltage (MV) transistor and a high voltage (HV) transistor.
8. The power converter of claim 1 , wherein said depletion mode group III-V transistor comprises a III-Nitride high electron mobility transistor (HEMT).
9. The power converter of claim 1 , wherein said power converter is a buck converter.
10. The power converter of claim 1 , wherein said power converter is enclosed in a package configured to contain only two semiconductor dies.
11. A power converter comprising:
two depletion mode GaN transistors monolithically integrated in an output stage die;
said two depletion mode GaN transistors being driven by two silicon control switches monolithically integrated in a driver IC die;
said two depletion mode GaN transistors being operated as enhancement mode transistors.
12. The power converter of claim 11 , wherein said output stage die comprises a III-Nitride die.
13. The power converter of claim 11 , wherein said driver IC die comprises a group IV die.
14. The power converter of claim 11 , wherein said driver IC die comprises a silicon die.
15. The power converter of claim 11 , wherein said two silicon control switches are low voltage (LV) switches.
16. The power converter of claim 11 , wherein said two silicon control switches comprise silicon field-effect transistors (FETs).
17. The power converter of claim 11 , wherein said two depletion mode GaN transistors are selected from the group consisting of midvoltage (MV) transistors and high voltage (HV) transistors.
18. The power converter of claim 11 , wherein said two depletion mode GaN transistors comprise GaN high electron mobility transistors (HEMTS).
19. The power converter of claim 11 , wherein said power converter is a buck converter.
20. The power converter of claim 11 , wherein said power converter is enclosed in a package configured to contain only two semiconductor dies.