Materials with modified surfaces and methods of manufacturing
Various embodiments of surface-modified devices, components, and associated methods of manufacturing are described herein. In one embodiment, an implantable device suitable for being implanted in a patient includes an implantable material having a utile shape and a surface and a modification material deposited on at least a portion of the surface of the implantable material. The modification material has a release rate in an implantation environment in the patient. The modification material at the release rate is effective as bactericidal without being cytotoxic to the patient.
1. A method for preparing an implantable device, comprising:
depositing a modification material onto at least a portion of a surface of an implantable device;
post treating the implantable device with the deposited modification material, wherein post treating the implantable device includes annealing the implantable device at an annealing temperature for an annealing duration; and
controlling at least one process condition during post treating the implantable device with the deposited modification material based on a target release rate of the deposited modification material into human tissue in an implantation environment, wherein controlling the at least one process condition includes controlling at least one of the annealing temperature or the annealing duration, wherein:
the modification material includes silver;
the implantable device includes a stainless steel surface;
depositing the modification material includes depositing silver onto at least a portion of the stainless steel surface of the implantable device via electrolytic deposition, the deposited silver having a surface area coverage of about 0.1% to about 50%;
post treating the implantable device includes annealing the implantable device with the deposited silver without substantially affect a mechanical property of the implantable device with the stainless steel surface, the mechanical property including one of tensile strength, compressive strength, yield strength, Young's modulus, ductility, and toughness, wherein the deposited and post treated silver has an interfacial shear strength of about 1 MPa to about 30 MPa; and
the method further includes controlling at least one process condition when depositing the modification material by adjusting at least one of:
a concentration of silver and/or ions thereof in an electrolyte solution,
an electrical deposition potential,
a deposition temperature,
a deposition period,
a heat up rate, or
a cool down rate based on a target release rate corresponding to a concentration of the modification material of about 0.5 to about 10 mg/L in the implantation environment.
2. The method of claim 1 wherein the modification material includes at least one of gold, zinc oxide, or copper in addition to silver.
3. The method of claim 1 , further comprising selecting the target release rate based on (1) an effective inhibition concentration of the modification material in the implantation environment and (2) a threshold concentration at which the modification material is cytotoxic.
4. The method of claim 1 wherein:
the modification material is a first modification material; and
the method further includes depositing a second modification material onto at least a portion of the surface of the implantable device and forming a layered and/or interleaved structure on the at least a portion of the surface.
5. The method of claim 1 wherein:
the modification material is a first modification material;
the at least a portion of the surface is a first surface portion; and
the method further includes depositing a second modification material onto a second surface portion of the implantable device.
6. A method for preparing an implantable device, comprising:
selecting a target release rate of a modification material based on an implantation environment, the modification material at the target release rate being effective as a bactericidal without being cytotoxic;
forming a modification region on at least a portion of a surface of an implantable material, the modification region having the modification material; and
adjusting at least one process condition when forming the modification region on at least a portion of the surface of the implantable material based on the selected target release rate of the modification material into the implantation environment, wherein:
the modification material includes silver;
the implantable device includes a stainless steel surface;
forming the modification region includes depositing silver onto at least a portion of the stainless steel surface of the implantable device via electrolytic deposition, the deposited silver having a surface area coverage of about 0.1% to about 50%;
the method further includes post treating the implantable device by annealing the implantable device with the deposited silver without substantially affect a mechanical property of the implantable device with the stainless steel surface, the mechanical property including one of tensile strength, compressive strength, yield strength, Young's modulus, ductility, and toughness, wherein the deposited and post treated silver has an interfacial shear strength of about 1 MPa to about 30 MPa; and
adjusting at least one process condition includes adjusting at least one of:
a concentration of silver and/or ions thereof in an electrolyte solution,
an electrical deposition potential,
a deposition temperature,
a deposition period,
a heat up rate, or
a cool down rate based on a target release rate corresponding to a concentration of the modification material of about 0.5 to about 10 mg/L in the implantation environment.
7. The method of claim 6 wherein selecting the target release rate includes selecting the target release rate based on at least one of a physiological characteristic of a patient to receive the implantable device and a target bacterium to inhibit.
8. The method of claim 6 wherein selecting the target release rate includes selecting the target release rate to correspond to a concentration of the modification material of about 0.5 to about 10 mg/L in the implantation environment.
9. The method of claim 6 wherein selecting the target release rate includes selecting the target release rate to correspond to a concentration of the modification material of about 0.01 to about 30 mg/L in the implantation environment.
10. The method of claim 6 wherein selecting the target release rate includes selecting a target release rate of at least one of silver, gold, zinc oxide, and copper based on an implantation environment.
11. The method of claim 6 wherein forming the modification region includes:
electrochemically depositing particulates of at least one of gold, zinc oxide, or copper in addition to silver on at least a portion of the surface of the implantable material; and
heating the implantable material with the deposited particulates to about 200° C. to about 700° C.
12. A method for preparing an implantable device, comprising:
depositing a modification material containing silver onto at least a portion of a stainless steel surface of the implantable device via electrolytic deposition, the deposited silver having a surface area coverage of about 0.1% to about 50%;
annealing the implantable device with the deposited silver without substantially affect a mechanical property of the implantable device with the stainless steel surface, the mechanical property including one of tensile strength, compressive strength, yield strength, Young's modulus, ductility, and toughness, wherein the deposited and annealed silver has an interfacial shear strength of about 1 MPa to about 30 MPa;
controlling at least one process condition during deposition of the modification material by adjusting at least one of:
a concentration of silver and/or ions thereof in an electrolyte solution,
an electrical deposition potential,
a deposition temperature,
a deposition period,
a heat up rate, or
a cool down rate based on a target release rate corresponding to a concentration of the modification material of about 0.5 to about 10 mg/L in the implantation environment; and
controlling at least one process condition during annealing the implantable device with the deposited modification material based on a target release rate of the deposited modification material into human tissue in an implantation environment, wherein controlling the at least one process condition includes controlling at least one of the annealing temperature or the annealing duration.
13. The method of claim 12 wherein:
the modification material is a first modification material; and
the method further includes depositing a second modification material onto at least a portion of the surface of the implantable device and forming a layered and/or interleaved structure on the at least a portion of the surface.
14. The method of claim 12 wherein:
the modification material is a first modification material;
the at least a portion of the surface is a first surface portion; and
the method further includes depositing a second modification material onto a second surface portion of the implantable device.
15. The method of claim 12 , further comprising selecting the target release rate based on (1) an effective inhibition concentration of the modification material in the implantation environment and (2) a threshold concentration at which the modification material is cytotoxic.
16. The method of claim 12 , further comprising selecting the target release rate based on an implantation environment, the modification material at the target release rate being effective as a bactericidal without being cytotoxic.
17. The method of claim 16 wherein selecting the target release rate includes selecting the target release rate based on at least one of a physiological characteristic of a patient to receive the implantable device and a target bacterium to inhibit.
18. The method of claim 16 wherein selecting the target release rate includes selecting the target release rate to correspond to a concentration of the modification material of about 0.5 to about 10 mg/L in the implantation environment.
19. The method of claim 16 wherein selecting the target release rate includes selecting the target release rate to correspond to a concentration of the modification material of about 0.01 to about 30 mg/L in the implantation environment.
20. The method of claim 16 wherein forming the modification region includes:
electrochemically depositing particulates of at least one of gold, zinc oxide, or copper in addition to silver on at least a portion of the surface of the implantable material; and
heating the implantable material with the deposited particulates to about 200° C. to about 700° C.