Method of manufacturing semiconductor device
There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a semiconductor substrate having an active region;
forming a dielectric layer on the active region;
forming a curing layer with a germanium (Ge)-containing material on the dielectric layer;
heat-treating the curing layer; and
removing the curing layer,
wherein the germanium (Ge) element exists in the interior of the dielectric layer and interface between the dielectric layer and the active region after removing the curing layer, and
wherein the method further comprises forming a protective capping layer on the dielectric layer before the forming of the curing layer.
2. The method of claim 1 , wherein the germanium-containing material is silicon germanium (SiGe) or germanium (Ge).
3. The method of claim 2 , wherein the germanium-containing material is SiGe doped with a specific conductivity-type impurity.
4. The method of claim 1 , wherein the heat treating is performed at a temperature ranging from 500° C. to 1,300° C.
5. The method of claim 1 , wherein, in removing the curing layer, at least a portion of the protective capping layer is removed.
6. The method of claim 1 , wherein the protective capping layer is a first electrode layer for a gate electrode.
7. The method of claim 1 , further comprising forming a second electrode layer on the first electrode layer after the removing of the curing layer.
8. The method of claim 7 , wherein at least one of the first and second electrode layers comprises at least one material selected from the group consisting of polysilicon (poly-Si), titanium (Ti), TiN, tungsten (W), WSi, WN, TaN, lanthanum (La), aluminum (Al), and TiAlC.
9. The method of claim 1 , further comprising forming a gate electrode on the dielectric layer after the removing of the curing layer.
10. The method of claim 1 , wherein the dielectric layer comprises at least one material selected from the group consisting of a hafnium oxide film (HfO 2 ), a hafnium silicon oxide film (HfSiO), a hafnium silicon oxy-nitride film (HfSiON), a hafnium oxy-nitride film (HfON), a hafnium aluminum oxide film (HfAlO), a hafnium lanthanum oxide film (HfLaO), a zirconium oxide film (ZrO 2 ), a tantalum oxide film (TaO 2 ), a zirconium silicon oxide film (ZrSiO), a lanthanum oxide film (La2O 3 ), a praseodymium oxide film (Pr 2 O 3 ), a dysprosium oxide film (Dy 2 O 3 ), a barium strontium titanate (BST) oxide film (Ba x Sr 1-x TiO 3 ), and a lead zirconate titanate (PZT) oxide film (Pb(Zr x Ti 1-x )O 3 ).
11. A method of manufacturing a semiconductor device, the method comprising:
forming a dielectric layer on a semiconductor substrate having an active region thereon;
forming a protective capping layer on the dielectric layer;
subsequently forming a curing layer with silicon germanium (SiGe) or germanium (Ge) on the protective capping layer on the dielectric layer;
heat-treating the curing layer; and
removing the curing layer.