Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a hard mask on the gate structure and the ILD layer; forming a first patterned mask layer on the hard mask; using the first patterned mask layer to remove part of the hard mask for forming a patterned hard mask; and utilizing a gas to strip the first patterned mask layer while forming a protective layer on the patterned hard mask, wherein the gas is selected from the group consisting of N 2 and O 2 .
1. A method for fabricating semiconductor device, comprising:
providing a substrate having at least a gate structure thereon, a cap layer on the gate structure, and an interlayer dielectric (ILD) layer around the gate structure and the cap layer, wherein a top surface of the cap layer is even with a top surface of the ILD layer;
forming a hard mask on the cap layer and the ILD layer;
forming a first patterned mask layer on the hard mask;
using the first patterned mask layer to remove part of the hard mask for forming a patterned hard mask; and
utilizing a gas to strip the first patterned mask layer while forming a protective layer on the patterned hard mask, wherein the gas is selected from the group consisting of N 2 and O 2 .
2. The method of claim 1 , wherein the hard mask comprises TiN.
3. The method of claim 2 , wherein the protective layer comprises TiON or TiO x .
4. The method of claim 1 , wherein the first patterned mask layer comprises an organic dielectric layer (ODL).
5. The method of claim 1 , further comprising:
forming an oxide layer on the gate structure and the ILD layer;
forming the hard mask and the first patterned mask layer on the oxide layer;
stripping the first patterned mask layer and forming the protective layer on the patterned hard mask; and
using the patterned hard mask and the protective layer to remove part of the oxide layer and part of the ILD layer for forming a plurality of openings adjacent to the gate structure.
6. The method of claim 1 , further comprising:
forming an oxide layer on the gate structure and the ILD layer;
forming the hard mask and the first patterned mask layer on the oxide layer;
stripping the first patterned mask layer and forming the protective layer on the patterned hard mask;
forming an ODL on the oxide layer and the protective layer;
forming a silicon-containing hard mask bottom anti-reflective coating (SHB) on the ODL;
using a patterned resist to remove part of the SHB, part of the ODL, part of the oxide layer, and part of the ILD layer for forming a plurality of openings; and
stripping the patterned resist, the SHB, and the ODL.
7. The method of claim 1 , wherein the patterned hard mask comprises a first pattern and a second pattern, and the first pattern covers the gate structure entirely.
8. The method of claim 7 , further comprising:
forming a second patterned mask layer on the patterned hard mask, wherein the second patterned mask layer comprises at least a slot opening exposing the second pattern of the patterned hard mask.