Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate.
1. A semiconductor device, comprising:
a substrate having a fin-shaped structure thereon;
a first gate structure on the fin-shaped structure;
a first contact plug adjacent to the first gate structure, wherein the first contact plug comprises metal;
a first hard mask on the first contact plug; and
a second hard mask on the first gate structure, wherein the top surfaces of the second hard mask and the first hard mask are coplanar.
2. The semiconductor device of claim 1 , further comprising:
a shallow trench isolation (STI) around the fin-shaped structure;
a second gate structure on the STI;
a first spacer adjacent to the first gate structure and a second spacer adjacent to the second gate structure; and
an interlayer dielectric (ILD) layer adjacent to the second gate structure on the STI.
3. The semiconductor device of claim 2 , further comprising:
a third gate structure on the fin-shaped structure; and
a third spacer adjacent to the third gate structure, wherein the first contact plug contact the first spacer and the third spacer.
4. The semiconductor device of claim 1 , wherein the first hard mask and the second hard mask comprise different material.
5. The semiconductor device of claim 1 , further comprising:
a dielectric layer on the first gate structure; and
a second contact plug in the dielectric layer and the first hard mask and contacting the first contact plug.
6. The semiconductor device of claim 5 , wherein the dielectric layer and the first hard mask comprise same material.
7. The semiconductor device of claim 5 , wherein the second contact plug contacts the first hard mask directly.