Semiconductor device
An n − -type semiconductor substrate ( 1 ) includes an active region and a terminal region disposed outside the active region. A p + -type anode layer ( 2 ) is formed in a portion of an upper surface of the n − -type semiconductor substrate ( 1 ) in the active region. A plurality of p + -type guard ring layers ( 3 ) are formed in a portion of the upper surface of the n − -type semiconductor substrate ( 1 ) in the terminal region. An n + -type cathode layer ( 5 ) is formed in a lower surface of the n − -type semiconductor substrate ( 1 ). An anode electrode ( 6 ) is connected to the p + -type anode layer ( 2 ). A metallic cathode electrode ( 7 ) is connected to the n + -type cathode layer ( 5 ). A recess ( 8 ) is formed by trenching the n + -type cathode layer ( 5 ) in the terminal region. The cathode electrode ( 7 ) is also formed in the recess ( 8 ).
1. A semiconductor device comprising:
a substrate including an active region and a terminal region disposed outside the active region;
a p + -type anode layer formed in a portion of an upper surface of the substrate in the active region;
a plurality of p + -type guard ring layers formed in a portion of the upper surface of the substrate in the terminal region;
an n + -type cathode layer formed in a lower surface of the substrate;
an anode electrode connected to the p + -type anode layer; and
a metallic cathode electrode connected to the n + -type cathode layer,
wherein a recess is formed by completely removing the n + -type cathode layer in the terminal region, and the cathode electrode is also formed in the recess.
2. The semiconductor device of claim 1 , wherein in the terminal region, not only the n + -type cathode layer but also the n − -type semiconductor substrate is trenched to an intermediate position to form the recess.
3. The semiconductor device of claim 1 , wherein the recess extends not only through the terminal region but also to an intermediate position in the active region.
4. A semiconductor device comprising:
a substrate including an active region and a terminal region disposed outside the active region;
a p + -type anode layer formed in a portion of an upper surface of the substrate in the active region;
a plurality of p + -type guard ring layers formed in a portion of the upper surface of the substrate in the terminal region;
an n + -type cathode layer formed in a lower surface of the substrate;
an anode electrode connected to the p + -type anode layer; and
a metallic cathode electrode connected to the n + -type cathode layer,
wherein a recess is formed by trenching the n + -type cathode layer in the terminal region, and the cathode electrode is also formed in the recess, and
wherein the recess is formed only in a corner portion of the substrate as viewed in plan.