Semiconductor module
A semiconductor module uses pin bonding and improves cooling capacity. The semiconductor module includes a semiconductor element; a pin electrically and thermally connected to an upper surface of the semiconductor element; a pin wiring substrate having a first metal film and a second metal film respectively provided on the rear and front surfaces of a pin wiring insulating substrate, the first metal film being bonded to the pin; a first DCB substrate having a third metal film and a fourth metal film respectively provided on the rear and front surfaces of a first ceramic insulating substrate, the third metal film being bonded to a lower surface of the semiconductor element; a first cooler thermally connected to the fourth metal film; and a second cooler that thermally connected to the second metal film.
1. A semiconductor module comprising:
a semiconductor element;
a pin electrically and thermally connected to an upper surface of the semiconductor element;
a pin wiring substrate including a pin wiring insulating substrate, a first metal film provided on a rear surface of the pin wiring insulating substrate, and a second metal film provided on a front surface of the pin wiring insulating substrate, the first metal film being bonded to the pin;
a first DCB substrate including a first ceramic insulating substrate, a third metal film provided on a front surface of the first ceramic insulating substrate, and a fourth metal film provided on a rear surface of the first ceramic insulating substrate, the third metal film being bonded to a lower surface of the semiconductor element;
a first cooler thermally connected to the fourth metal film; and
a second cooler thermally connected to the second metal film.
2. The semiconductor module according to claim 1 , wherein the pin wiring insulating substrate is made of a material selected from the group consisting of Si 3 N 4 , AlN and Al 2 O 3 .
3. The semiconductor module according to claim 1 , further comprising: a second DCB substrate including a second ceramic insulating substrate, a fifth metal film provided on a rear surface of the second ceramic insulating substrate, and a sixth metal film provided on a front surface of the second ceramic insulating substrate,
wherein the second DCB substrate is provided between the second metal film and the second cooler so as to be thermally connected to the second metal film and the second cooler.
4. The semiconductor module according to claim 1 , further comprising a heat spreader provided between the second metal film and the second cooler so as to be thermally connected to the second metal film and the second cooler.
5. The semiconductor module according to claim 1 , wherein a plurality of sets of the semiconductor element and the pin is provided.
6. The semiconductor module according to claim 1 , wherein the semiconductor element includes an input terminal and an output terminal extending from between the first cooler and the second cooler to an outside.
7. A semiconductor module comprising:
a plurality of semiconductor module units, each having, as a unit module, the semiconductor module according to claim 1 ,
wherein the plurality of semiconductor module units is arranged in a row such that side surfaces from which the input and output terminals of the semiconductor elements do not protrude face each other.
8. The semiconductor module according to claim 6 , wherein each of the first cooler and the second cooler is integrally provided so as to cover an entire row of the module units.
9. The semiconductor module according to claim 1 , wherein the semiconductor module is sealed with a sealing resin except for the first cooler, a surface which is thermally connected to the first cooler, the second cooler, and a surface which is thermally connected to the second cooler in the semiconductor module.