Switching film structure for magnetic random access memory (MRAM) cell
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
1. A magnetic random access memory (MRAM) cell, comprising:
a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
a bidirectional diode selector, comprising a selector electrode directly coupled to the pin layer, and a selector layer directly coupled to the capping layer of the MTJ, to enable access to the MTJ.
2. The MRAM cell of claim 1 , in which the selector electrode of the bidirectional diode selector directly supports the pin layer of the MTJ.
3. The MRAM cell of claim 2 , in which the selector layer of the bidirectional diode selector is self-aligned to an MTJ electrode.
4. The MRAM cell of claim 1 , in which the selector layer of the bidirectional diode selector is directly on the capping layer of the MTJ.
5. The MRAM cell of claim 1 , in which the selector layer of the bidirectional diode selector comprises a conductive film.
6. The MRAM cell of claim 1 , in which the bidirectional diode selector has a non-linear selector characteristic.
7. The MRAM cell of claim 1 , within an MRAM cell array, coupled to a plurality of access transistors.
8. The MRAM cell of claim 1 , within a first MRAM layer, stacked on another MRAM layer.
9. The MRAM cell of claim 1 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
10. A magnetic random access memory (MRAM) cell, comprising:
a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
a bi-directionally diode selector, directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ, in which the bi-directionally diode selector is within an electrode via of the MTJ.
11. A magnetic random access memory (IVIRAM) cell, comprising:
a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
means for bi-directionally accessing the MTJ, in which the means for bi-directionally accessing comprises a selector electrode directly coupled to the pin layer, and a selector layer directly coupled to the capping layer of the MTJ.
12. The MRAM cell of claim 11 , in which the accessing means is directly to the capping layer of the MTJ.
13. The MRAM cell of claim 11 , in which the accessing means has a non-linear selector characteristic.
14. The MRAM cell of claim 11 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
15. A method for storing data in a magnetic random access memory (MRAM) cell, comprising:
a step for storing a memory bit in a magnetic tunneling junction (MTJ) device, the MTJ device comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
a step for accessing the MTJ device with a selector electrode directly coupled to the pin layer, and a selector layer directly coupled to the capping layer of the MTJ.
16. The method of claim 15 , further comprising a step for integrating the MRAM cell into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
17. A method for storing data in a magnetic random access memory (MRAM) cell, comprising:
storing a memory bit in a magnetic tunneling junction (MTJ) device, the MTJ device comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
accessing the MTJ device with a selector electrode directly coupled to the pin layer, and a selector layer directly coupled to the capping layer of the MTJ.
18. The method of claim 17 , further comprising integrating the MRAM cell into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.