Integrated circuit device and method for manufacturing the same
An integrated circuit device according to one embodiment includes a plurality of first electrode films stacked spaced from each other, a plurality of second electrode films stacked spaced from each other on the plurality of first electrode films and extending in one direction, a semiconductor pillar penetrating the first electrode films and the second electrode films, a memory film provided between the first electrode films and the semiconductor pillar and capable of storing charge, a gate insulating film provided between the second electrode films and the semiconductor pillar, and a spacer film electrically connecting width-direction edges of the plurality of second electrode films to each other.
1. An integrated circuit device comprising:
a plurality of first electrode films stacked spaced from each other;
a plurality of second electrode films stacked spaced from each other, on the plurality of first electrode films, and extending in one direction;
a semiconductor pillar penetrating the first electrode films and the second electrode films;
a memory film provided between the first electrode films and the semiconductor pillar and capable of storing charge;
a gate insulating film provided between the second electrode films and the semiconductor pillar; and
a spacer film electrically connecting width-direction edges of the plurality of second electrode films to each other.
2. The device according to claim 1 , wherein the spacer film extends along a plane including the one direction and a stacking direction of the plurality of second electrode films.
3. The device according to claim 1 , wherein the spacer film connects respective ones of both width-direction edges of the plurality of second electrode films to each other.
4. The device according to claim 1 , further comprising a via penetrating the plurality of second electrode films and connecting the plurality of second electrode films to each other.
5. The device according to claim 1 , wherein the spacer film contains metal silicide.
6. The device according to claim 1 , wherein the spacer film is conductive and contains silicon.
7. The device according to claim 1 , further comprising another spacer film whose composition is different from a composition of the spacer film.
8. The device according to claim 7 , wherein the another spacer film is insulative.
9. The device according to claim 8 , wherein the another spacer film contains aluminum oxide.
10. The device according to claim 9 , wherein the spacer film is conductive and contains silicon.