Seemless tiling and high pixel density in a 3D high resolution x-ray sensor with integrated scintillator grid for low noise and high image quality

1. An optical sensor, comprising:

a silicon wafer having a front side, a back side opposite the front side and an insulator layer therein, the silicon wafer comprising an array of photodiodes between the front side of the silicon wafer and the insulator layer, each of the photodiodes having a p region and an n region and further having a contact on the front side of the silicon wafer, the silicon wafer further comprising an array of grid holes between the back side of the silicon wafer and the insulator layer, each of the grid holes self-aligned with a respective photodiode of the array of photodiodes and filled with a transparent material having a refractive index sufficient for total internal reflection of light in the respective grid hole, each of the grid holes traversing through the insulator layer and partially into the p region of the respective photodiode; and

one or more silicon dies with an array of photo-sensing circuits each of which having a contact at a top surface of the one or more silicon dies,

wherein the contact on each of the photodiodes is aligned and bonded to the contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies,

wherein incident light in the grid holes on the back side of the silicon wafer is converted into electron-hole pairs by the photodiodes altering a voltage across the photodiode, and

wherein the photo-sensing circuits of the one or more silicon dies sense the voltage through the contacts on the photodiodes and the contacts on the photo-sensing circuits of the one or more silicon dies.

2. The optical sensor of claim 1 , wherein the silicon wafer comprises a silicon-on-insulator (SOI) wafer.

3. The optical sensor of claim 2 , wherein the grid holes on the back side of the SOI wafer reach an insulator of the SOI wafer.

4. The optical sensor of claim 2 , wherein PN diodes are formed below an insulator of the SOI wafer with impurities of n type or p type, and wherein the PN diodes are aligned to sidewalls of the grid holes.

5. The optical sensor of claim 4 , wherein the PN diodes are electrically connected to the contacts on the front side of the SOI wafer through multilevel metal interconnect.

6. The optical sensor of claim 4 , wherein light sensed by the PN diodes and charge proportional to exposed radiation on the back side of the SOI wafer appear at the contacts on the front side of the SOI wafer.

7. The optical sensor of claim 1 , wherein sidewalls of the grid holes are coated with a thin layer of oxide, a thin layer of nitride, a thin layer of silicon dioxide or metal, or a combination thereof.

8. The optical sensor of claim 7 , wherein the thin layer of metal comprises aluminum or chrome.

9. The optical sensor of claim 1 , wherein the grid holes are covered by an insulator, and wherein sidewalls of the grid holes are coated with an insulator stack with a dielectric constant such that light remains in the grid holes due to total internal reflection.

10. The optical sensor of claim 1 , wherein the contacts of the array of photodiodes on the silicon wafer have a first pitch, wherein the contacts of the array of photo-sensing circuits on the one or more silicon dies have a second pitch smaller than the first pitch, and wherein the contacts of the array of photodiodes on the silicon wafer and the contacts of the array of photo-sensing circuits on the one or more silicon dies are bonded together face to face with the first pitch reduced using multilevel metal interconnects.