IP Library › Granted Patent US 9,473,108
Granted Patent B2
US 9,473,108 · App. 14/482,272 · Granted Oct 18, 2016

Surface acoustic wave device and filter

Inventors: Kentaro Nakamura (Tokyo, JP); Hidetaro Nakazawa (Tokyo, JP); Shogo Inoue (Tokyo, JP); Jun Tsutsumi (Tokyo, JP)
Assignee: TAIYO YUDEN CO., LTD.
H03H9/6489H03H3/08H03H9/02818
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Quick Facts
Patent No.
US 9,473,108
App. No.
14/482,272
Granted
Oct 18, 2016
Kind
B2
Abstract

A surface acoustic wave device includes: a pair of comb-like electrodes formed on a piezoelectric substrate, each of which includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other com-like electrode, respectively; and additional films extending in the form of a strip in a first direction in which the electrode fingers are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other comb-like electrode.

Claims (23)

1. A surface acoustic wave device comprising:

a pair of comb-like electrodes formed on a piezoelectric substrate, each of the pair of comb-like electrodes includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other of the pair of comb-like electrodes, respectively; and

additional films extending in the form of a strip in a first direction in which the electrode fingers of the pair of comb-like electrodes are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other of the pair of comb-like electrodes.

2. The surface acoustic wave device according to claim 1 , wherein each of the additional films extends within a range between the ends of the electrode fingers of the one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other of the pair of comb-like electrodes connected to the bus bar in a second direction in which each of the electrode fingers of the pair of comb-like electrodes extend.

3. The surface acoustic wave device according to claim 1 , wherein each of the additional films extends within a range between a position of 0.4λ from the ends of the electrode fingers of the one of the pair of comb-like electrodes and a position of 0.4λ from the ends of the dummy electrode fingers of the other of the pair of comb-like electrodes located at opposite sides of the gaps in a second direction in which each of the electrode fingers of the pair of comb-like electrodes extend, and cover at least either the electrode fingers or the dummy electrode fingers where λ is a wavelength of acoustic waves excited by the pair of comb-like electrodes.

4. The surface acoustic wave device according to claim 1 , wherein each of the additional films are spaced apart from at least either the ends of the electrode fingers of the one of the pair of comb-like electrodes or the ends of the dummy electrode fingers of the other of the pair of comb-like electrodes located at opposite sides of the gaps in a second direction in which each of the electrode fingers of the pair of comb-like electrodes extend.

5. The surface acoustic wave device according to claim 1 , further comprising a protective film covering the pair of comb-like electrodes, wherein the additional films are provided on the protective film.

6. The surface acoustic wave device according to claim 1 , wherein the additional films include any of tantalum oxide, aluminum oxide, silicon oxide, silicon nitride, aluminum nitride, silicon carbide, titanium oxide, silicon, diamond and a metal film.

7. A surface acoustic wave device comprising:

a pair of comb-like electrodes formed on a piezoelectric substrate, each of the pair of comb-like electrodes includes electrode fingers and a bus bar to which the electrode fingers are connected and does not include dummy electrode fingers, the electrode fingers of one of the pair of comb-like electrodes facing the bus bar of the other of the pair of comb-like electrodes; and

additional films extending in the form of a strip in a first direction in which the electrode fingers of the pair of comb-like electrodes are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and a side of the bus bar of the other of the pair of comb-like electrodes.

8. The surface acoustic wave device according to claim 7 , wherein each of the additional films extends within a range between a position of 0.4λ from the ends of the electrode fingers of the one of the pair of comb-like electrodes and a position of 0.4λ from the side of the bus bar of the other of the pair of comb-like electrodes located at opposite sides of the gaps in a second direction in which each of the electrode fingers of the pair of comb-like electrodes extend, and cover at least either the electrode fingers or the bus bar where λ is a wavelength of acoustic waves excited by the pair of comb-like electrodes.

9. The surface acoustic wave device according to claim 7 , wherein each of the additional films are spaced apart from at least either the ends of the electrode fingers of the one of the pair of comb-like electrodes or the side of the bus bar of the other of the pair of comb-like electrodes located at opposite sides of the gaps in a second direction in which each of the electrode fingers of the pair of comb-like electrodes extend.

10. The surface acoustic wave device according to claim 7 , further comprising a protective film covering the pair of comb-like electrodes, wherein the additional films are provided on the protective film.

11. The surface acoustic wave device according to claim 7 , wherein the additional films include any of tantalum oxide, aluminum oxide, silicon oxide, silicon nitride, aluminum nitride, silicon carbide, titanium oxide, silicon, diamond and a metal film.

12. A filter comprising resonators connected between an input terminal and an output terminal,

the resonators including a surface acoustic wave device including:

a pair of comb-like electrodes formed on a piezoelectric substrate, each of the pair of comb-like electrodes includes electrode fingers, dummy electrode fingers and a bus bar to which the electrode fingers and the dummy electrode fingers are connected, the electrode fingers and the dummy electrode fingers of one of the pair of comb-like electrodes facing the dummy electrode fingers and the electrode fingers of the other of the pair of comb-like electrodes, respectively; and

additional films extending in the form of a strip in a first direction in which the electrode fingers of the pair of comb-like electrodes are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and ends of the dummy electrode fingers of the other of the pair of comb-like electrodes.

13. A filter comprising resonators connected between an input terminal and an output terminal,

the resonators including a surface acoustic wave device including:

a pair of comb-like electrodes formed on a piezoelectric substrate, each of the pair of comb-like electrodes includes electrode fingers and a bus bar to which the electrode fingers are connected and does not include dummy electrode fingers, the electrode fingers of one of the pair of comb-like electrodes facing the bus bar of the other of the pair of comb-like electrodes; and

additional films extending in the form of a strip in a first direction in which the electrode fingers of the pair of comb-like electrodes are arranged side by side, each of the additional films covering at least parts of gaps defined by ends of the electrode fingers of one of the pair of comb-like electrodes and a side of the bus bar of the other of the pair of comb-like electrodes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2014
From: NAKAMURA, KENTARO; NAKAZAWA, HIDETARO; INOUE, SHOGO; TSUTSUMI, JUN
To: TAIYO YUDEN CO., LTD.
Reel/Frame 033711/0082 →
Priority Claims (1)
JP 2013-228241 · Nov 1, 2013 · national
Continuity (1)
Related Publication 20150123746A1 · May 7, 2015