Semiconductor light emitting device
There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.
1. A semiconductor light emitting device comprising:
a first conductivity-type semiconductor base layer;
a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and
a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer,
wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer.
2. The semiconductor light emitting device of claim 1 , wherein a portion of the first and third layers is crystalline.
3. The semiconductor light emitting device of claim 1 , wherein the oxide layer includes at least one of SiO 2 , Al 2 O 3 , ZrO, and TiO 2 , and the nitride layer includes at least one of SiN, SiON, TiN, TiAlN, TiSiN, and AlN.
4. The semiconductor light emitting device of claim 1 , wherein the mask layer comprises a first nitride layer, a first graphene layer, an oxide layer, a second graphene layer, and a second nitride layer sequentially stacked on the first conductivity-type semiconductor base layer.
5. The semiconductor light emitting device of claim 4 , wherein a thickness of the oxide layer is greater than thicknesses of the first and second nitride layers.
6. The semiconductor light emitting device of claim 1 , wherein the graphene layer includes graphene in the form of a quantum dot.
7. The semiconductor light emitting device of claim 1 , wherein the graphene layer is a monolayer graphene or a multilayer graphene.
8. The semiconductor light emitting device of claim 1 , wherein a portion of the graphene layer is oxidized.
9. The semiconductor light emitting device of claim 1 , wherein a thickness of the mask layer ranges from 160 nm to 240 nm.
10. The semiconductor light emitting device of claim 1 , wherein the plurality of light emitting nanostructures further include a high resistive layer disposed to be in contact with the active layer.
11. The semiconductor light emitting device of claim 1 , further comprising a transparent electrode layer positioned on the second conductivity-type semiconductor layer.
12. A semiconductor light emitting device comprising:
a first conductivity-type semiconductor base layer;
a mask layer disposed on the first conductivity-type semiconductor base layer and including two or more layers formed of different materials with a plurality of openings exposing the first conductivity-type semiconductor base layer; and
a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer,
wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer.
13. The semiconductor light emitting device of claim 12 , wherein the mask layer comprises at least two graphene layer.
14. A backlight unit comprising:
a substrate;
a light source mounted on the substrate; and
an optical sheet disposed above the light source,
wherein the light source includes the light emitting device of claim 12 .
15. A semiconductor light emitting device comprising:
a first conductivity-type semiconductor base layer;
a mask layer disposed on the first conductivity-type semiconductor base layer and including an opening exposing the first conductivity-type semiconductor base layer; and
a light emitting nanostructure disposed on the opening and including a first conductivity-type semiconductor core, a high resistive layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked,
wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer.
16. The semiconductor light emitting device of claim 15 , wherein the high resistive layer is deposed between the first conductivity-type semiconductor core and the active layer.
17. The semiconductor light emitting device of claim 15 , wherein the high resistive layer is deposed on the active layer.
18. The semiconductor light emitting device of claim 15 , wherein the high resistive layer is configured to block leakage current generated in an upper portion of the first conductivity-type semiconductor core.