Aeosol synthesis of faceted aluminum nanocrystals
Low temperature gas-phase methods for the preparation of faceted aluminum crystals are disclosed.
1. A method for preparing nanosized aluminum particles, the method comprising heating a vapor phase aluminum precursor at a temperature and for a period of time sufficient to convert at least a portion of the vapor phase aluminum precursor to nanosized aluminum particles, wherein the vapor phase aluminum precursor comprises triisobutylaluminum.
2. The method of claim 1 , wherein heating comprises a temperature less than about 660° C.
3. The method of claim 1 , wherein heating comprises a temperature less than about 500° C.
4. The method of claim 1 , wherein the vapor phase aluminum precursor is prepared by contacting an inert gas with an aluminum precursor material or a solution comprising the aluminum precursor material.
5. The method of claim 4 , wherein the vapor phase aluminum precursor comprises a triisobutylaluminum aerosol in argon.
6. The method of claim 1 , wherein the vapor phase aluminum precursor is heated at temperature of about 350° C.
7. The method of claim 1 , wherein heating comprises introducing the vapor phase aluminum precursor into a tube furnace.
8. The method of claim 7 , further comprising first heating the vapor phase aluminum precursor at a temperature wherein substantially no decomposition occurs, and then heating the vapor phase aluminum precursor at a temperature sufficient to at least partially decompose the vapor phase aluminum precursor.
9. The method of claim 1 , further comprising heating the nanosized aluminum particles to anneal at least a portion of the particles.
10. The method of claim 9 , wherein heating the nanosized aluminum particles comprises heating at a temperature greater than the temperature used to convert the vapor phase aluminum precursor and less than about 660° C.
11. The method of claim 9 , wherein heating the nanosized aluminum particles comprises heating at a temperature of from about 350° C. to about 500° C.
12. The method of claim 1 , wherein the vapor phase aluminum precursor is heated at about 350° C. to form nanosized aluminum particles, which are subsequently heated at an elevated temperature relative to the temperature prior to the subsequent heating.
13. The method of claim 1 , further comprising contacting the nanosized aluminum particles with a quantity of oxygen sufficient to form a passivating oxide layer on a surface thereof.
14. A method for preparing nanosized aluminum particles, the method comprising heating a vapor phase aluminum precursor at a temperature of about 350° C. to about 660° C. and for a period of time sufficient to convert at least a portion of the vapor phase aluminum precursor to faceted nanosized aluminum particles.