IP Library Granted Patent US 9,493,886
Granted Patent B2
US 9,493,886 · App. 13/607,737 · Granted Nov 15, 2016

Low internal stress copper electroplating method

Inventors: George R. Allardyce (Hinckley, GB); Gary Hamm (Billerica, MA); Narsmoul Karaya (Dorchester, MA)
C25D5/54C25D3/38
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Quick Facts
Patent No.
US 9,493,886
App. No.
13/607,737
Granted
Nov 15, 2016
Kind
B2
Abstract

Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.

Claims (10)

1. A method comprising:

a) contacting a Hull Cell metal test panel with a composition comprising one or more sources of copper ions, one or more suppressors and an accelerator at a given concentration in a range of 1 ppm and greater;

b) applying a current to the Hull Cell metal test panel for a given period of time over different current densities to electroplate copper on the Hull Cell metal test panel;

c) determining MattCDmax by correlating a current density where the electroplated copper deposit transitions from matt to bright at the given concentration of the accelerator; and

d) electroplating copper with a matt appearance from the composition at the MattCDmax or at a lower current density below the MattCDmax on a substrate at the given concentration of the accelerator or optionally at a greater accelerator concentration than the given accelerator concentration.

2. The method of claim 1 , wherein the accelerator is chosen from one or more of 3-mercaptopropane-1-sulfonic acid, ethylenedithiodipropyl sulfonic acid, bis-(ω-sulfobutyl)-disulfide, methyl-(ω-sulfopropyl)-disulfide, N,N-dimethyldithiocarbamic acid (3-sulfopropyl) ester, (O-ethyldithiocarbonato)-S-(3-sulfopropyl)-ester, 3-[(amino-iminomethyl)-thiol]-1-propanesulfonic acid, 3-(2-benzylthiazolylthio)-1-propanesulfonic acid, bis-(sulfopropyl)-disulfide and alkali metal salts thereof.

3. The method of claim 1 , wherein the one or more sources of copper ions are chosen from copper sulfate and copper alkane sulfonates.

4. The method of claim 1 , wherein the suppressors are chosen from one or more of polyoxyalkylene glycol, carboxymethylcellulose, nonylphenolpolyglycol ether, octandiolbis-(polyalkylene glycolether), octanolpolyalkylene glycolether, oleic acidpolyglycol ester, polyethylenepropylene glycol, polyethylene glycol, polyethylene glycoldimethylether, polyoxypropylene glycol, polypropylene glycol, polyvinylalcohol, stearic acidpolyglycol ester and stearyl alcoholpolyglycol ether.

5. The method of claim 1 , wherein the accelerator concentration ranges from 2 ppm and greater.

6. The method of claim 5 , wherein the accelerator concentration ranges from 3 ppm to 500 ppm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2016
From: ALLARDYCE, GEORGE R.; HAMM, GARY; KARAYA, NARSMOUL
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 040011/0856 →
Continuity (2)
Provisional Application 61573652 · Sep 9, 2011
Related Publication 20130240368A1 · Sep 19, 2013