Semiconductor device and liquid crystal display device containing the same
The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.
1. A semiconductor device comprising:
a first circuit, a second circuit, and a pixel portion each including a transistor over a first substrate; and
a second substrate fixed to the first substrate with a sealant,
wherein the sealant has a first closed pattern shape surrounding the first circuit, a second closed pattern shape surrounding the second circuit, and a third closed pattern shape surrounding the pixel portion,
wherein a first closed space surrounded by the first closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air,
wherein a second closed space surrounded by the second closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air, and
wherein a third closed space surrounded by the third closed pattern shape, the first substrate, and the second substrate is filled with a liquid crystal material, and
wherein the sealant is made of one continuous piece.
2. The semiconductor device according to claim 1 ,
wherein the second substrate is a glass substrate.
3. The semiconductor device according to claim 1 ,
wherein the first substrate is a semiconductor substrate or a glass substrate.
4. The semiconductor device according to claim 1 ,
wherein the transistor includes an oxide semiconductor layer including at least one of In, Ga and Zn.
5. A semiconductor device comprising:
a gate side driver circuit, a source side driver circuit, and a pixel portion each including a transistor over a first substrate; and
a second substrate fixed to the first substrate with a sealant,
wherein the transistors in the gate side driver circuit, the source side driver circuit, and the pixel portion are surrounded by the sealant,
wherein the sealant has a first closed pattern shape surrounding the gate side driver circuit, a second closed pattern shape surrounding the source side driver circuit, and a third closed pattern shape surrounding the pixel portion,
wherein a first closed space surrounded by the first closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air,
wherein a second closed space surrounded by the second closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air, and
wherein a third closed space surrounded by the third closed pattern shape, the first substrate, and the second substrate is filled with a liquid crystal material.
6. The semiconductor device according to claim 5 ,
wherein the second substrate is a glass substrate.
7. The semiconductor device according to claim 5 ,
wherein the first substrate is a semiconductor substrate or a glass substrate.
8. A semiconductor device comprising:
a gate side driver circuit, a source side driver circuit, and a pixel portion each including a transistor having an oxide semiconductor layer over a first substrate; and
a second substrate fixed to the first substrate with a sealant,
wherein the transistors in the gate side driver circuit, the source side driver circuit, and the pixel portion are surrounded by the sealant,
wherein the sealant has a first closed pattern shape surrounding the gate side driver circuit, a second closed pattern shape surrounding the source side driver circuit, and a third closed pattern shape surrounding the pixel portion,
wherein a first closed space surrounded by the first closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air,
wherein a second closed space surrounded by the second closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air, and
wherein a third closed space surrounded by the third closed pattern shape, the first substrate, and the second substrate is filled with a liquid crystal material.
9. The semiconductor device according to claim 8 ,
wherein the second substrate is a glass substrate.
10. The semiconductor device according to claim 8 ,
wherein the first substrate is a semiconductor substrate or a glass substrate.
11. The semiconductor device according to claim 8 ,
wherein the oxide semiconductor layer includes at least one of In, Ga and Zn.
12. A semiconductor device comprising:
a first substrate; and
a second substrate fixed to the first substrate with a sealant,
wherein the sealant has a first closed pattern shape, a second closed pattern shape, and a third closed pattern shape,
wherein a first closed space surrounded by the first closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air,
wherein a second closed space surrounded by the second closed pattern shape, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air, and
wherein a third closed space surrounded by the third closed pattern shape, the first substrate, and the second substrate is filled with a liquid crystal material.
13. The semiconductor device according to claim 12 ,
wherein the second substrate is a glass substrate.
14. The semiconductor device according to claim 12 ,
wherein the first substrate is a semiconductor substrate or a glass substrate.