Method for forming interconnection structures
The present invention provides a method for forming interconnection structures, including the following steps: providing a semiconductor wafer with a dielectric layer; forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer; forming a second recessed area for forming dummy structures on the dielectric layer; depositing a barrier layer to cover the first and second recessed areas and the non-recessed area; depositing a metal layer to fill the first and second recessed areas and cover the non-recessed area; removing the metal layer on the non-recessed area to expose the barrier layer; and removing the barrier layer on the non-recessed area to expose the dielectric layer.
1. A method for forming interconnection structures, comprising:
providing a semiconductor water with a dielectric layer;
forming a first recessed area for forming the interconnection structures and a non-recessed area on the dielectric layer;
forming a second recessed area for forming dummy structures on the dielectric layer;
depositing a barrier layer to cover the first and second recessed areas and the non-recessed area;
depositing as metal layer to fill the first and second recessed areas and cover the non-recessed area;
removing the metal layer on the non-recessed area to expose the barrier layer, wherein removing the metal layer includes using an electropolishing method and the dummy structures prevent the barrier layer from being oxidized; and
removing the harrier layer on the non-recessed area to expose the dielectric layer.
2. The method as claimed in claim 1 , wherein the dummy structures are formed at a field area of the dielectric layer.
3. The method as claimed in claim 2 , wherein the density of the dummy structures is in the range of 50% to 100% of that of the interconnection structures.
4. The method as claimed in claim 2 , wherein the distance W 1 between the adjacent interconnection structure and the dummy structure is in the range of 20 nm to 5000 nm.
5. The method as claimed in claim 1 , wherein the size of the dummy structure is in the range of 20 nm to 5000 nm, the width D 1 of the dummy structure is in the range of 20 nm to 5000 nm, the length Dw of the dummy structure is in the range of 20 nm to 5000 nm.
6. The method as claimed in claim 1 , wherein the dummy structures are formed at a wide space area between two adjacent metal lines in the dielectric layer.
7. The method as claimed in claim 6 , wherein the Width W 3 of the wide space area is 60 nm or wider.
8. The method as claimed in claim 1 , wherein the dummy structures are formed at space areas of two sides of an isolated metal line in the dielectric layer.
9. The method as claimed in claim 8 , wherein the density of the dummy structures is in the range of 20% to 80%.
10. The method as claimed in claim 1 , wherein the dummy structures include one or more different shapes.
11. The method as claimed in claim 1 , wherein the dummy structures are formed at the same time that the interconnection structures are formed.
12. The method as claimed in claim 1 , wherein the material of the dummy structures is the same as the interconnection structures.
13. The method as claimed in claim 1 , wherein the step of removing the metal layer on the non-recessed area to expose the harrier layer includes firstly removing a partial metal layer by using a CMP method and then removing the rest metal layer by using an electropolishing method.
14. The method as claimed in claim 1 , wherein removing the barrier layer by using a XeF 2 gas phase etching method.