Semiconductor device and method for fabricating the same
A semiconductor device comprises a substrate, a semiconductor fin, a first isolation structure and a first dummy structure. The semiconductor fin comprises a first sub-fin and a second sub-fin protruding from a surface of the substrate. The first isolation structure is disposed in the semiconductor fin used for electrically isolating the first sub-fin and the second sub-fin. The first dummy structure is disposed on the first isolation structure and laterally extends beyond the first isolation structure along a long axis of the semiconductor fin, so as to partially overlap a portion of the first sub-fin and a portion of the second sub-fin.
1. A semiconductor device, comprising:
a semiconductor fin having a first sub-fin and a second sub-fin protruding from a surface of a substrate;
a first isolation structure, disposed in the semiconductor fin, having an opening extending therein and used for electrically isolating the first sub-fin and the second sub-fin;
a first dummy structure disposed on the first isolation structure and having at least one metal layer entirely overlapping on the first isolation structure along a long axis of the semiconductor fin, wherein the metal layer laterally conformally extends downwards into the opening formed in the first isolation structure and extends upwards beyond the first isolation structure along the long axis of the semiconductor fin, so as to form a stepped structure overlapping on sidewalls and a bottom of the opening, a portion of the first sub-fin and a portion of the second sub-fin.
2. The semiconductor device according to claim 1 , wherein the first isolation structure comprises a shallow trench isolation (STI).
3. The semiconductor device according to claim 1 , further comprising a plurality of gate structures respectively disposed on the first sub-fin and the second sub-fin; wherein the first dummy structure has a first extending portion laterally extending beyond the first isolation structure along the long axis of the semiconductor fin, so as to partially overlap a portion of the first sub-fin and a portion of the second sub-fin; and the first extending portion has a height identical to that of the gate structures both are measured from a bottom of the substrate to bottoms of the first extending portion and the gate structures.
4. The semiconductor device according to claim 3 , wherein the first dummy structure has a second extending portion extending into the first isolation structure, wherein the second extending portion has a bottom lower than the bottoms of the gate structures.
5. The semiconductor device according to claim 3 , wherein the first dummy structure comprises:
a u-shaped high dielectric constant (high-k) dielectric layer directly in contact with the first isolation structure; and
at least one metal layer disposed on the u-shaped high-k dielectric layer.
6. The semiconductor device according to claim 3 , wherein one of the gate structures comprises:
a u-shaped high-k dielectric layer disposed on the semiconductor fin; and
at least one metal layer disposed on the u-shaped high-k dielectric layer.
7. The semiconductor device according to claim 3 , wherein the first dummy structure comprises:
a dielectric layer, disposed on the semiconductor fin and the first isolation structure; and
a poly-silicon layer, disposed on the dielectric layer.
8. The semiconductor device according to claim 3 , further comprising:
a second isolation structure, disposed in the semiconductor fin used for electrically isolating the first sub-fin and a third sub-fin of the semiconductor fin; and
a second dummy structure disposed on the second isolation structure; wherein the second dummy structure merely overlaps with the second isolation structure.
9. The semiconductor device according to claim 8 , wherein bottoms of the first dummy structure and the second dummy structure form a plane with the bottoms of the gate structures.
10. The semiconductor device according to claim 3 , wherein the first dummy structure has a stack structure different from that of the gate structures.
11. The semiconductor device according to claim 10 , wherein one of the gate structures is a N-type gate structure having a N-type work function layer; one of the gate structures is a P-type gate structure having a P-type work function layer; and the stack structure of the first dummy structure comprises the N-type work function layer and the P-type work function layer.
12. The semiconductor device according to claim 10 , wherein one of the gate structures is a N-type gate structure having a N-type work function layer; one of the gate structures is a P-type gate structure having a P-type work function layer; and the stack structure of the first dummy structure does not comprise the N-type work function layer or the P-type work function layer.
13. The semiconductor device according to claim 3 , wherein one of the gate structures is a N-type gate structure having a N-type work function layer, the first dummy structure has a stack structure identical to that of the N-type gate structure.
14. The semiconductor device according to claim 3 , wherein one of the gate structures is a P-type gate structure having a P-type work function layer, the first dummy structure has a stack structure identical to that of the P-type gate structure.