Semiconductor device and method for manufacturing the same
View Patent ↗A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.
1. A semiconductor device comprising:
a semiconductor layer;
a first source electrode overlapping a first part of the semiconductor layer;
a second source electrode over the first source electrode, the second source electrode extending beyond an end portion of the first source electrode to be in direct contact with the semiconductor layer in a region being overlapped by a gate electrode;
a first drain electrode overlapping a second part of the semiconductor layer;
a second drain electrode over the first drain electrode, the second drain electrode extending beyond an end portion of the first drain electrode to be in direct contact with the semiconductor layer;
a first sidewall in direct contact with the second source electrode and the semiconductor layer; and
a second sidewall in direct contact with the second drain electrode and the semiconductor layer.
2. The semiconductor device according to claim 1 , wherein a thickness of each of the second source electrode and the second drain electrode is greater than or equal to 5 nm and less than or equal to twice a shortest distance between the first sidewall and the second sidewall.
3. The semiconductor device according to claim 1 , wherein a length of a channel formed in the semiconductor layer is less than or equal to 50 nm.
4. The semiconductor device according to claim 1 , wherein the semiconductor layer includes an oxide semiconductor.
5. The semiconductor device according to claim 1 , wherein the semiconductor layer is a stack including an oxide semiconductor layer and an oxide layer.
6. The semiconductor device according to claim 1 , wherein each one of the first sidewall and the second sidewall is an insulating material containing oxygen.
7. The semiconductor device according to claim 1 ,
wherein the first sidewall is an insulating material formed by oxidizing a part of the second source electrode, and
wherein the second sidewall is an insulating material formed by oxidizing a part of the second drain electrode.
8. The semiconductor device according to claim 1 , wherein the gate electrode does not overlap the first source electrode in a cross sectional view cut along a central line in a channel width direction of a transistor comprising the semiconductor layer.
9. A semiconductor device comprising:
a semiconductor layer;
a first source electrode over the semiconductor layer, the first source electrode being in direct contact with a first part of the semiconductor layer;
a second source electrode over the first source electrode, the second source electrode extending beyond an end portion of the first source electrode to be in direct contact with the semiconductor layer in a region;
a first drain electrode over the semiconductor layer, the first drain electrode being in direct contact with a second part of the semiconductor layer;
a second drain electrode over the first drain electrode, the second drain electrode extending beyond an end portion of the first drain electrode to be in direct contact with the semiconductor layer;
a first sidewall in direct contact with a side surface of the second source electrode and the semiconductor layer;
a second sidewall in direct contact with a side surface of the second drain electrode and the semiconductor layer;
a gate insulating layer over the first sidewall, the second sidewall and the semiconductor layer;
a gate electrode over the gate insulating layer, and
wherein the gate electrode overlaps the region.
10. The semiconductor device according to claim 9 , wherein a thickness of each of the second source electrode and the second drain electrode is greater than or equal to 5 nm and less than or equal to twice a shortest distance between the first sidewall and the second sidewall.
11. The semiconductor device according to claim 9 , wherein a length of a channel formed in the semiconductor layer is less than or equal to 50 nm.
12. The semiconductor device according to claim 9 , wherein the semiconductor layer includes an oxide semiconductor.
13. The semiconductor device according to claim 9 , wherein the semiconductor layer is a stack including an oxide semiconductor layer and an oxide layer.
14. The semiconductor device according to claim 9 , wherein each one of the first sidewall and the second sidewall is an insulating material containing oxygen.
15. The semiconductor device according to claim 9 ,
wherein the first sidewall is an insulating material formed by oxidizing a part of the second source electrode, and
wherein the second sidewall is an insulating material formed by oxidizing a part of the second drain electrode.
16. The semiconductor device according to claim 9 , wherein the gate electrode does not overlap the first source electrode in a cross sectional view cut along a central line in a channel width direction of a transistor comprising the semiconductor layer.