IP Library Granted Patent US 9,496,681
Granted Patent B2
US 9,496,681 · App. 14/936,756 · Granted Nov 15, 2016

Apparatus and method for tunable generation of coherent radiation

Inventors: Giulio Vampa (Ottawa, CA); Paul Corkum (Ottawa, CA); Thomas Brabec (Ottawa, CA)
Assignee: University of Ottawa
H01S5/0428G02F1/35H01S3/108H01S3/109H01S3/16H01S3/1628H01S5/041H01S5/042H01S5/0425H01S5/0427H01S5/0604
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Quick Facts
Patent No.
US 9,496,681
App. No.
14/936,756
Granted
Nov 15, 2016
Kind
B2
Abstract

A method and apparatus is disclosed for generating tunable attosecond-scale radiation pulses, with a frequency in range of ultraviolet to soft-X-ray, from a solid-state medium. The invention utilizes an intense laser pulse to drive a high harmonic generation (HHG) process in a solid state medium and a weak secondary field to control the HHG process. The weak secondary field has a frequency equal to the second harmonic of the intense laser pulse. The spatial, temporal and spectral properties of the HHG process and the emitted harmonic beam are tuned by adjusting the relative delay between the two fields and the intensity of the weak secondary field.

Claims (33)

1. A method comprising:

applying a driving electromagnetic field having a first frequency and a first intensity to a solid-state medium to thereby trigger a high harmonic generation process in the solid-state medium,

wherein the high harmonic generation process results in a generation of a harmonic beam from the solid-state medium,

wherein the harmonic beam comprises a plurality of high-order harmonics of the first frequency; and

applying a control field having a second frequency, a second intensity and a relative phase with respect to the driving electromagnetic field to an interaction region of the electromagnetic field and the solid-state medium to thereby control one or more spectral, temporal and spatial properties of the harmonic beam generated from the solid-state medium.

2. A method of claim 1 , wherein varying the second intensity of the control field modulates a spectrum of the high harmonic generation process in the solid-state medium.

3. A method of claim 1 , wherein varying the relative phase of the control field as a function of a harmonic order, modulates an intensity of a respective high-order harmonic of the first frequency generated from the solid-state medium.

4. A method of claim 1 , wherein, the solid-state medium has a crystalline structure.

5. A method of claim 1 , wherein, the solid-state medium is a semiconductor material.

6. A method of claim 1 , wherein, the solid-state medium is a dielectric material.

7. A method of claim 1 , where the solid-state medium is a polymer material.

8. A method of claim 1 , wherein the solid-state medium is a biological material.

9. A method of claim 8 , wherein the solid-state medium is a thin slice of a biological material.

10. A method of claim 1 wherein the second frequency of the control field is a second-harmonic of the first frequency of the driving electromagnetic field.

11. A method of claim 1 , wherein the driving electromagnetic field comprises a laser field.

12. An apparatus comprising:

a semiconductor-based medium comprising a semiconductor-laser interaction region;

a first input configured to focus a drive laser field onto the semiconductor-laser interaction region to thereby initiate a high harmonic generation process in the semiconductor-laser interaction region;

a second adjustable input for introducing a control field onto the semiconductor-laser interaction region to thereby control the high harmonic generation process,

wherein the control field spatially and temporally overlaps the drive laser field; and

an output for directing a signal generated from the semiconductor-laser interaction region onto one or more terminals,

wherein the signal comprises one or more high harmonics.

13. An apparatus of claim 12 , wherein the terminals are internal or external terminals.

14. The apparatus of claim 12 , wherein the control field is applied through electrodes fashioned internally on the semiconductor generation medium.

15. The apparatus of claim 12 , wherein the control field is applied by an external source.

16. The apparatus of claim 12 , wherein the control field is a laser field.

17. The apparatus of claim 12 , wherein the control field comprises DC field.

18. The apparatus of claim 12 , wherein the control field comprises AC field.

19. The apparatus of claim 12 , wherein the control field comprises a pulsed electrical signal.

20. The apparatus of claim 12 , wherein the drive laser field comprises a laser pulse.

21. The apparatus of claim 12 , wherein the adjustable input comprises adjusting an intensity of the control field.

22. The apparatus of claim 12 , wherein the adjustable input comprises adjusting a delay of the control field relative to the drive laser field.

23. The apparatus of claim 12 , wherein the one or more high energy attosecond pulses are in an ultraviolet to soft x-ray frequency regime.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 10, 2015
From: VAMPA, GIULIO; CORKUM, PAUL; BRABEC, THOMAS
To: UNIVERSITY OF OTTAWA
Reel/Frame 036998/0184 →
Continuity (3)
Provisional Application 62082251 · Nov 20, 2014
Provisional Application 62248372 · Oct 30, 2015
Related Publication 20160149371A1 · May 26, 2016