Structure for FinFETs

1. An apparatus comprising:

an isolation region formed in a substrate; and

a fin line formed over the substrate, wherein:

the fin line is wrapped by a first gate electrode structure to form a first transistor; and

an end of the fin line is of a tapered shape, wherein the fin line is of a trapezoidal shape from a cross section view along a longitudinal axis of the fin line, and wherein the end of the fin line is a leg of the trapezoidal shape, and wherein the fin line comprises:

a channel connected between a first drain/source region and a second drain/source region of the first transistor, and wherein the channel extends from first drain/source region to the second drain/source region in a first direction and the longitudinal axis of the fin line is parallel with the first direction; and

a second gate electrode wrapping the fin line to form a dummy transistor.

2. The apparatus of claim 1 , wherein:

the end of the fin line is embedded in the second gate electrode.

3. The apparatus of claim 1 , wherein:

the end the fin line extends outside the second gate electrode to form a floating node, and wherein the second gate electrode is configured such that:

the second gate electrode is coupled to ground when the fin line and the second gate electrode form an n-type transistor; and

the second gate electrode is coupled to a high voltage potential when the fin line and the second gate electrode form a p-type transistor.

4. The apparatus of claim 1 , wherein:

the first drain/source region, the second drain/source region and the channel form a p-type FinFET; and

an epitaxial growth material of the first drain/source region and the second drain/source region is selected from a group consisting of SiGe, SiGeC, Ge, Si, III-V compound semiconductor materials and any combinations thereof.

5. The apparatus of claim 1 , wherein:

the first drain/source region, the second drain/source region and the channel form an n-type FinFET; and

an epitaxial growth material of the first drain/source region and the second drain/source region is selected from a group consisting of SiP, SiC, SiPC, Si, III-V compound semiconductor materials and any combinations thereof.

6. The apparatus of claim 1 , wherein the isolation region is a shallow trench isolation structure.

7. The apparatus of claim 1 , wherein:

from a first cross sectional view, the fin line is of a bottom interior angle more than 86 degrees.

8. The apparatus of claim 1 , wherein:

from a second cross sectional view, the end of the fine line is of a bottom interior angle less than 83 degrees.

9. A device comprising:

a well over a substrate;

an isolation region over the well; and

a fin line over the well and surrounded by the isolation region, wherein:

a top surface of the fin line has a long side and a short side;

the fin line is wrapped by a first gate electrode structure to form a first transistor; and

an end of the fin line is of a tapered shape, wherein the fin line is of a trapezoidal shape from a cross section view along a longitudinal axis of the fin line, and wherein the end of the fin line is a leg of the trapezoidal shape, and wherein the longitudinal axis is parallel with the long side.

10. The device of claim 9 , wherein the fin line comprises:

a channel connected between a first drain/source region and a second drain/source region of the first transistor.

11. The device of claim 10 , wherein:

a dopant type of the first drain/source region and the second drain/source region is different from a dopant type of the well.

12. The device of claim 9 , further comprising:

a second gate electrode structure wrapping the fin line to form a dummy transistor.

13. The device of claim 12 , wherein:

a middle portion of the fin line is wrapped by the first gate electrode structure; and

an end of the fin line is wrapped by the second gate electrode structure.

14. The device of claim 13 , wherein:

the end of the fin line is a leg of a trapezoidal shape; and

the second gate electrode structure extends along the leg of the trapezoidal shape.

15. The device of claim 9 , further comprising:

a second gate electrode structure wrapping the fin line and adjacent to an end of the fin line; and

the end of the fin line extends outside the second gate electrode structure to form a floating node.

16. An apparatus comprising:

a well over a substrate;

an isolation region over the well;

a two-stage fin line over the well, wherein:

the two-stage fin line is wrapped by a first gate electrode structure to form a first transistor, and wherein the first gate electrode structure extends from a first sidewall of the two-stage fin line to a second sidewall of the two-stage fin line in a first direction; and

an end of the two-stage fin line is of a tapered shape, wherein the two-stage fin line is of a trapezoidal shape from a cross section view along a longitudinal axis of the two-stage fin line, and wherein the end of the two-stage fin line is a leg of the trapezoidal shape, and wherein the longitudinal axis of the two-stage fin line is orthogonal to the first direction.

17. The apparatus of claim 16 , wherein:

a bottom portion of the two-stage fin line is surrounded by the isolated region; and

an upper portion of the two-stage fin line is partially surrounded by the isolated region.

18. The apparatus of claim 17 , wherein:

the bottom portion is trapezoidal in shape; and

the upper portion is rectangular in shape.

19. The apparatus of claim 17 , wherein:

a height of the bottom portion is approximately equal to a height of the upper portion.

20. The apparatus of claim 16 , further comprising:

a second gate electrode structure wrapping the end of the two-stage fin line, wherein:

the end of the two-stage fin line is a leg of a trapezoidal shape; and

the second gate electrode structure extends along the leg of the trapezoidal shape.