Organic light emitting display and method of manufacturing the same

1. An organic light emitting display device, comprising:

a sub-pixel including:

a first electrode and a second electrode arranged on a substrate, the first and second electrodes facing each other,

a light emission layer interposed between the first and second electrodes, and

a mirror unit that corresponds to a portion of the light emission layer, the mirror unit being buried in a first part of a base surface of the sub-pixel such that an uppermost surface of the mirror unit facing the light emission layer is coplanar with an uppermost surface of a second part of the base surface that faces the light emission layer and that excludes the mirror unit,

wherein the mirror unit only partially overlaps a bottommost surface of the light emission layer, light is reflected from the mirror unit to the second electrode, and light reflected from the mirror unit to the second electrode is reflected from the second electrode and passes the first electrode to be emitted to outside the substrate.

2. The organic light emitting display device of claim 1 , wherein:

an image is formed toward the first electrode, and

the mirror unit is formed close to the first electrode, and

the first electrode is formed of a transparent material, and the mirror unit is formed of a semi-transparent material that allows light to be reflected toward the second electrode in a partial area of the first electrode.

3. The organic light emitting display device of claim 2 , wherein the base surface is a buffer layer on the substrate.

4. The organic light emitting display device of claim 2 , wherein the transparent material includes one of indium tin oxide and indium zinc oxide.

5. The organic light emitting display device of claim 2 , wherein the semi-transparent material includes one of a metal and a distributed Bragg reflector material.

6. The organic light emitting display device of claim 5 , wherein the metal includes one of Ag, Al, Mg, Cu, MgAg, and CaAg.

7. The organic light emitting display device of claim 5 , wherein the distributed Bragg reflector material includes one of SiO 2 , SiN x , ITO, ZnO 2 , and ZrO 2 .

8. An organic light emitting display device, comprising:

a buffer layer on a substrate and a mirror unit on a portion of the buffer layer;

a thin film transistor that includes an active layer, a gate electrode, a source electrode, and a drain electrode;

a capacitor that includes a bottom electrode formed in a same layer as the active layer and a top electrode facing the bottom electrode;

a first insulating layer arranged between the bottom electrode and the top electrode, and arranged between the active layer and the gate electrode;

a second insulating layer on the first insulating layer;

a pixel electrode formed of a same material as the top electrode;

a third insulating layer that covers the source electrode and the drain electrode, the third insulating layer exposing the pixel electrode;

an organic light emission layer on the pixel electrode, an uppermost surface of the mirror unit facing the organic light emission layer being coplanar with an uppermost surface of a part of the buffer layer that faces the organic light emission layer and that excludes the mirror unit; and

an opposite electrode on the organic light emission layer,

wherein the mirror unit only partially overlaps a bottommost surface of the organic light emission layer, light is reflected from the mirror unit to the opposite electrode, and light reflected from the mirror unit to the opposite electrode is reflected from the opposite electrode and passes the pixel electrode to be emitted to outside the substrate.

9. The organic light emitting display device of claim 8 , further comprising a pad portion in a same layer as the source electrode and the drain electrode.

10. A method of manufacturing an organic light emitting display device, the method comprising:

burying a mirror unit in a base surface on a substrate such that an uppermost surface of the mirror unit is coplanar with an uppermost surface of a part of the base surface that excludes the mirror unit;

forming a first electrode including both a first portion corresponding to the mirror unit and a second portion in a non-facing arrangement with respect to the mirror unit;

forming a light emission layer on the first electrode; and

forming a second electrode on the light emission layer,

wherein the mirror unit only partially overlaps a bottommost surface of the light emission layer, light is reflected from the mirror unit to the second electrode, and light reflected from the mirror unit to the second electrode is reflected from the second electrode and passes the first electrode to be emitted to outside the substrate.

11. The method of claim 10 , wherein the burying of the mirror unit includes:

forming a buffer layer on the substrate, the buffer layer being formed to the base surface;

forming a silicon layer on the buffer layer;

patterning using a halftone mask so that there is a first region where the silicon layer remains, a second region from which the silicon layer is removed so that the buffer layer is exposed, and a third region where the buffer layer is removed to a predetermined depth to form a filling groove; and

forming the mirror unit in the filling groove.

12. The method of claim 11 , wherein:

the first region where the silicon layer remains is formed into an active layer of a thin film transistor, and

first electrode is formed to be connected to the active layer.