Oxide, semiconductor device, module, and electronic device

1. An oxide comprising:

a plurality of plate-like In—Ga—Zn oxides over a surface,

wherein each of the plurality of plate-like In—Ga—Zn oxides has a crystal structure,

wherein each of the plurality of plate-like In—Ga—Zn oxides includes a first layer, a second layer, and a third layer,

wherein the first layer includes a gallium atom, a zinc atom, and an oxygen atom,

wherein the second layer includes an indium atom and an oxygen atom,

wherein the third layer includes a gallium atom, a zinc atom, and an oxygen atom, and

wherein a flat plane of each of the plurality of plate-like In—Ga—Zn oxides is substantially perpendicular to a normal vector of the surface.

2. An oxide comprising:

a plurality of plate-like In—Ga—Zn oxides including a first plate-like In—Ga—Zn oxide, a second plate-like In—Ga—Zn oxide, and a third plate-like In—Ga—Zn oxide over a surface,

wherein each of the plurality of plate-like In—Ga—Zn oxides has a crystal structure,

wherein each of the plurality of plate-like In—Ga—Zn oxides includes a first layer, a second layer, and a third layer,

wherein the first layer includes a gallium atom, a zinc atom, and an oxygen atom,

wherein the second layer includes an indium atom and an oxygen atom,

wherein the third layer includes a gallium atom, a zinc atom, and an oxygen atom,

wherein the first plate-like In—Ga—Zn oxide is between the second plate-like In—Ga—Zn oxide and the third plate-like In—Ga—Zn oxide,

wherein a flat-plane of each of the second plate-like In—Ga—Zn oxide and the third plate-like In—Ga—Zn oxide is substantially perpendicular to the normal vector of the surface, and

wherein a flat plane of the first plate-like In—Ga—Zn oxide is not substantially perpendicular to the normal vector of the surface.

3. The oxide according to claim 1 , wherein a composition formula of each of the plurality of plate-like In—Ga—Zn oxides is InGaZnO 4 .

4. A semiconductor device comprising:

a semiconductor including the oxide according to claim 1 ;

an insulator; and

a conductor,

wherein the insulator includes a region in contact with the semiconductor, and

wherein the conductor includes a region where the conductor and the semiconductor overlap with each other with the insulator therebetween.

5. A module comprising:

the semiconductor device according to claim 4 ; and

a printed circuit board.

6. An electronic device comprising:

the semiconductor device according to claim 4 or the module according to claim 5 ; and

a speaker, an operation key, or a battery.

7. The oxide according to claim 1 , wherein an average value of sizes of the plurality of plate-like In—Ga—Zn oxides is between 1.5 nm and 2.0 nm.

8. The oxide according to claim 1 , wherein the oxide includes carbon and a concentration of carbon in the oxide is lower than 5×10 19 atoms/cm 3 .

9. The oxide according to claim 2 , wherein a composition formula of each of the plurality of plate-like In—Ga—Zn oxides is InGaZnO 4 .

10. A semiconductor device comprising:

a semiconductor including the oxide according to claim 2 ;

an insulator; and

a conductor,

wherein the insulator includes a region in contact with the semiconductor, and

wherein the conductor includes a region where the conductor and the semiconductor overlap with each other with the insulator therebetween.

11. A module comprising:

the semiconductor device according to claim 10 ; and

a printed circuit board.

12. An electronic device comprising:

the semiconductor device according to claim 10 or the module according to claim 11 ; and

a speaker, an operation key, or a battery.

13. The oxide according to claim 2 , wherein an average value of sizes of the plurality of plate-like In—Ga—Zn oxides is between 1.5 nm and 2.0 nm.

14. The oxide according to claim 2 , wherein the oxide includes carbon and a concentration of carbon in the oxide is lower than 5×10 19 atoms/cm 3 .