Wide band variable transmittance optical device

1. An optical device comprising:

an electronically active cell comprising a guest-host mixture of a liquid crystal host and a guest dye material comprising one or more dichroic dyes, contained between a pair of plastic substrates,

wherein the guest-host mixture has an axis orientation that is alterable between a clear state orientation and a dark state orientation perpendicular thereto;

wherein said guest-host mixture has an order parameter, S mix , greater than 0.78 and a nematic-isotropic transition temperature T NI greater than 40° C.;

wherein said pair of plastic substrates have an optical retardation with less than ±20% variation in uniformity for any given wavelength of incident light;

wherein said optical device further comprises an electronically passive layer for further reducing the transmission of light through said optical device;

wherein said optical device exhibits a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 nm; and

wherein said optical device has a variable transmission with a dark state transmission equal to or below 40% and a transmission swing between the clear state orientation and the dark state orientation greater than or equal to 30%.

2. The optical device of claim 1 , wherein said guest-host mixture has a clear state orientation when no voltage is applied to the cell and a dark state orientation when a voltage is applied to the cell, and wherein said liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 0.9 but greater than or equal to 0.25.

3. The optical device of claim 1 , wherein said guest-host mixture has a dark state orientation when no voltage is applied to the cell and a clear state orientation when a voltage is applied to the cell and wherein said liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 5 but greater than or equal to 1.75.

4. The optical device of claim 1 , wherein said electronically passive layer is a polarization independent absorptive, reflective or scattering layer, or a combination thereof.

5. The optical device of claim 4 , wherein said electronically passive layer comprises a photochromic dye.

6. The optical device of claim 1 , wherein said electronically passive layer is a polarization dependent absorptive or reflective layer, or a combination thereof.

7. The optical device of claim 1 , wherein said one or more dichroic dyes in the guest dye material are azo-based dyes having at least two azo groups.

8. The optical device of claim 1 , wherein said electronically active cell itself exhibits a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 nm, a variable transmission with a dark state transmission equal to or below 40% and a transmission swing between the clear state orientation and the dark state orientation greater than or equal to 30%.

9. The optical device of claim 1 , wherein said optical device is curved in at least one dimension.

10. The optical device of claim 1 , wherein said optical device is a window or sunroof of a vehicle.

11. An optical device comprising:

a first electronically active cell comprising a first guest-host mixture of a liquid crystal host and a guest dye material comprising one or more dichroic dyes, contained between a first pair of plastic substrates, wherein the first guest-host mixture has an axis orientation that is alterable between a clear state orientation and a dark state orientation perpendicular thereto;

wherein said first guest-host mixture has an order parameter, S mix , greater than 0.78 and a nematic-isotropic transition temperature T NI greater than 40° C.;

wherein said first pair of plastic substrates have an optical retardation with less than ±20% variation in uniformity for any given wavelength of incident light;

wherein the optical device further comprises a second electronically active cell comprising a liquid crystal—dye mixture for further reducing the transmission of light through said optical device;

wherein said optical device exhibits a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 nm; and

wherein said optical device has a dark state transmission equal to or below 40% and a transmission swing between the clear state orientation and the dark state orientation greater than or equal to 30%.

12. The optical device of claim 11 , wherein said first guest-host mixture has a clear state orientation when no voltage is applied to the cell and a dark state orientation perpendicular thereto when a voltage is applied to the cell, and wherein said liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 0.9 but greater than or equal to 0.25.

13. The optical device of claim 11 , wherein said first guest-host mixture has a dark state orientation when no voltage is applied to the cell and a clear state orientation perpendicular thereto when a voltage is applied to the cell and wherein the liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 5 but greater than or equal to 1.75.

14. The optical device of claim 11 , wherein said second electronically active cell absorbs or scatters a portion of light in response to an applied voltage.

15. The optical device of claim 11 , wherein said second electronically active cell is absorptive or scattering in the absence of an applied voltage.

16. The optical device of claim 11 , wherein said first electronically active cell itself exhibits a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 nm, a variable transmission with a dark state transmission equal to or below 40% and a transmission swing between the clear state orientation and the dark state orientation greater than or equal to 30%.

17. The optical device of claim 11 , wherein said first electronically active cell and said second electronically active cell each exhibit a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 n.

18. An optical device comprising:

an electronically active cell comprising a guest-host mixture of a liquid crystal host and a guest dye material comprising one or more dichroic dyes, contained between a pair of plastic substrates, wherein the guest-host mixture has an axis orientation that is alterable between a clear state orientation and a dark state orientation perpendicular thereto;

wherein said guest-host mixture has an order parameter, S mix , greater than 0.78 and a nematic-isotropic transition temperature T NI greater than 40° C.;

wherein said first pair of plastic substrates have an optical retardation with less than ±20% variation in uniformity for any given wavelength of incident light;

the mixture further comprising an ionic element to induce dynamic scattering in the liquid crystal host when a second voltage is applied to the cell;

wherein the optical device exhibits a wide absorption band having an aggregate full width at half maximum (A-FWHF) that is greater than 175 nm within a visible wavelength range of 400-700 nm;

wherein the optical device has a dark state transmission equal to or below 40% and a transmission swing between the clear state orientation and the dark state orientation greater than or equal to 30%.

19. The optical device of claim 18 , wherein said guest-host mixture has a clear state orientation when no voltage is applied to the cell and a dark state orientation when a voltage is applied to the cell, and wherein said liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 0.9 but greater than or equal to 0.25.

20. The optical device of claim 18 , wherein said guest-host mixture has a dark state orientation when no voltage is applied to the cell and a clear state orientation when a voltage is applied to the cell and wherein said liquid crystal host comprises a chiral nematic material with a thickness to pitch ratio (d/p) of less than 5 but greater than or equal to 1.75.