Method for performing activation of dopants in a GaN-base semiconductor layer
View Patent ↗The method for performing activation of p-type dopants in a GaN-based semiconductor includes a first step of providing a substrate including (i) a GaN-based semiconductor material layer including p-type electric dopant impurities, (ii) a cap block devoid of any silicon-based compound, in contact with the semiconductor material layer, and (iii) a silicon-based covering layer covering the cap block. The method includes a second heat treatment step at a temperature of more than 900° C. so as to activate the p-type electric dopant impurities in the semiconductor material layer.
1. A method for performing activation of p-type dopants in a GaN-based semiconductor comprising the following steps:
providing a substrate comprising:
a GaN-based semiconductor material layer provided with p-type electric dopant impurities,
a cap block in contact with the GaN-based semiconductor material layer and comprising a layer consisting essentially of Mg or MgO, the cap block being devoid of any silicon-based compound, and
a silicon-based covering layer covering the cap block, and
performing a heat treatment at a temperature of more than 850° C. so as to activate the p-type electric dopant impurities in the GaN-based semiconductor material layer.
2. The method for performing activation of p-type dopants according to claim 1 , wherein the layer consisting essentially of Mg or MgO has a thickness comprised between 1 nm and 30 nm.
3. The method for performing activation of p-type dopants according to claim 1 , wherein the cap block further comprises an AlGaN layer positioned between the GaN-based semiconductor material layer and the layer consisting essentially of Mg or MgO, the AlGaN layer having a thickness comprised between 1 nm and 40 nm.
4. The method for performing activation of p-type dopants according to claim 3 , wherein the AlGaN layer comprises Ga, and the Ga is present in an amount of up to 50 at. %.
5. The method for performing activation of p-type dopants according to claim 3 , wherein the cap block comprises an additional AlGaN layer having a thickness comprised between 1 nm and 40 nm positioned between the layer consisting essentially of Mg or MgO and the silicon-based covering layer.
6. The method for performing activation of p-type dopants according to claim 1 , wherein the cap block further comprises an AlN layer positioned between the GaN-based semiconductor material layer and the layer consisting essentially of Mg or MgO, the AlN layer having a thickness comprised between 1 nm and 40 nm.
7. The method for performing activation of p-type dopants according to claim 1 , wherein deposition of the silicon-based covering layer is performed at a temperature of less than 850° C.
8. The method for performing activation of p-type dopants according to claim 1 , wherein a thickness of the silicon-based covering layer is comprised between 5 nm and 500 nm.
9. The method for performing activation of p-type dopants according to claim 1 , wherein the cap block is deposited on the GaN-based semiconductor material layer, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block before the heat treatment is performed.
10. The method for performing activation of p-type dopants according to claim 1 , wherein the silicon-based covering layer is deposited on the cap block, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block and through the silicon-based covering layer before the heat treatment is performed.
11. A method for performing activation of p-type dopants in a GaN-based semiconductor comprising the following steps:
providing a substrate comprising:
a GaN-based semiconductor material layer provided with implanted p-type electric dopant impurities,
a cap block in contact with the GaN-based semiconductor material layer and comprising a layer consisting essentially of Mg or MgO, devoid of any silicon-based compound, and
a silicon-based covering layer covering the cap block, and
performing a heat treatment at a temperature of more than 850° C. so as to activate the implanted p-type electric dopant impurities in the GaN-based semiconductor material layer.
12. The method for performing activation of p-type dopants according to claim 11 , wherein the layer consisting essentially of Mg or MgO has a thickness comprised between 1 nm and 30 nm.
13. The method for performing activation of p-type dopants according to claim 11 , wherein deposition of the silicon-based covering layer is performed at a temperature of less than 850° C.
14. The method for performing activation of p-type dopants according to claim 11 , wherein the cap block is deposited on the GaN-based semiconductor material layer, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block before the heat treatment is performed.
15. The method for performing activation of p-type dopants according to claim 11 , wherein the silicon-based covering layer is deposited on the cap block, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block and through the silicon-based covering layer before the heat treatment is performed.
16. A method for performing activation of p-type dopants in a GaN-based semiconductor comprising the following steps:
providing a substrate comprising:
a GaN-based semiconductor material layer provided with implanted p-type electric dopant impurities, and
a cap block devoid of any silicon-based compound, in contact with the GaN-based semiconductor material layer, the cap block comprising
a Mg or MgO layer,
a first AlGaN layer positioned between the GaN-based semiconductor material layer and the Mg or MgO layer, and
a second AlGaN layer positioned between the Mg or MgO layer and a silicon-based covering layer covering the cap block, and
performing a heat treatment at a temperature of more than 850° C. so as to activate the implanted p-type electric dopant impurities in the GaN-based semiconductor material layer.
17. The method for performing activation of p-type dopants according to claim 16 , wherein deposition of the silicon-based covering layer is performed at a temperature of less than 850° C.
18. The method for performing activation of p-type dopants according to claim 16 , wherein a thickness of the silicon-based covering layer is comprised between 5 nm and 500 nm.
19. The method for performing activation of p-type dopants according to claim 16 , wherein the cap block is deposited on the GaN-based semiconductor material layer, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block before the heat treatment is performed.
20. The method for performing activation of p-type dopants according to claim 16 , wherein the silicon-based covering layer is deposited on the cap block, and the p-type electric dopant impurities are then implanted in the GaN-based semiconductor material layer through the cap block and through the silicon-based covering layer before the heat treatment is performed.