Semiconductor device including nanowire transistor
A semiconductor device includes at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and includes a channel region, a gate that surrounds at least a part of the channel region, and a gate dielectric film that is disposed between the channel region and the gate. A source/drain region that contacts one end of the at least one nanowire is formed in a semiconductor layer that extends from the substrate to the one end of the at least one nanowire. Insulating spacers are formed between the substrate and the at least one nanowire. The insulating spacers are disposed between the gate and the source/drain region and are formed of a material that is different from a material of the gate dielectric film.
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a substrate;
forming a first semiconductor layer and a second semiconductor layer sequentially disposed on the substrate, the second semiconductor layer including a material different from that of the first semiconductor layer;
forming a third semiconductor layer in order to form source/drain regions by forming trenches disposed at both ends of the second semiconductor layer in a first region of the substrate;
forming a gate dielectric layer and a gate surrounding a portion of the second semiconductor layer;
forming first insulating spacers disposed between the gate and the source/drain regions; and
forming second insulating spacers disposed between the second semiconductor layer and the substrate and between the gate and the source/drain regions,
wherein the gate dielectric layer includes a material different from those of the first and second insulating spacers, and
wherein the first insulating spacers surround a portion of the second semiconductor layer and portions of the second insulating spacers.
2. The method of claim 1 , wherein forming the second insulating spacers includes:
forming a first portion of the first semiconductor layer resulting from removing a second portion of the first semiconductor layer; and
oxidizing the first portion of the first semiconductor layer to form the second insulating spacers.
3. The method of claim 1 , wherein forming the second insulating spacers includes forming a first portion of the first semiconductor layer by the oxidation of second portions of the first semiconductor layer, and
wherein the first portion of the first semiconductor layer is disposed between the second portions of the first semiconductor layer.
4. The method of claim 1 , wherein forming the second insulating spacers includes:
forming a first portion of the first semiconductor layer by etching a portion of the first semiconductor layer; and
forming the second insulating spacers by using deposition of an insulating material.
5. The method of claim 1 , wherein a material of each of the first insulating spacers is different from that of each of the second insulating spacers.