Silicon-controlled rectifier electrostatic discharge protection device and method for forming the same
View Patent ↗Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type well region, an N-type well region adjacent to the P-type well region, a first P-type doped region and a first N-type doped region in the P-type well region, and a second N-type doped region and a second P-type doped region in the N-type well region. A first center-doped region and a second center-doped region doped with impurity ions of a same type are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region. The first center-doped region is located within the second center-doped region, has a doping concentration higher than a doping concentration in the second center-doped region, and has a depth smaller than a depth of the second center-doped region.
1. A silicon-controlled rectifier (SCR) electrostatic discharge protection (ESD) device, comprising:
a semiconductor substrate having a P-type well region and an N-type well region adjacent to the P-type well region;
a first P-type doped region in the P-type well region;
a first N-type doped region in the P-type well region between the first P-type doped region and the N-type well region;
a second N-type doped region in the N-type well region;
a second P-type doped region in the N-type well region between the second N-type doped region and the P-type well region; and
a first center-doped region and a second center-doped region, wherein the first center-doped region and the second center-doped region are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region, the first center-doped region is located within and enclosed by the second center-doped region, the second center-doped region has a depth greater than a depth of the first center-doped region, and the first center-doped region and the second center-doped region are doped with impurity ions of a same type, a concentration of the impurity ions in the first center-doped region being higher than a concentration of the impurity ions in the second center-doped region.
2. The device according to claim 1 , wherein:
the impurity ions doped in the first center-doped region and the second center-doped region are N-type,
the depth of the second center-doped region is smaller than a depth of the N-type well region, and
the concentration of the impurity ions in the second center-doped region is higher than a concentration of impurity ions in the N-type well region.
3. The device according to claim 2 , wherein
the concentration of the impurity ions in the N-type well region is less than about 1E18 atom/cm 3 ,
the concentration of the impurity ions in the second center-doped region ranges from about 1E18 atom/cm 3 to about 1E19 atom/cm 3 , and
the concentration of the impurity ions in the first center-doped region is higher than about 1E19 atom/cm 3 .
4. The device according to claim 1 , wherein:
the impurity ions doped in the first center-doped region and the second center-doped region are P-type,
the depth of the second center-doped region is smaller than a depth of the P-type well region, and
the concentration of the impurity ions in the second center-doped region is higher than a concentration of impurity ions in the P-type well region.
5. The device according to claim 4 , wherein
the concentration of the impurity ions in the P-type well region is less than about 1E18 atom/cm 3 ,
the concentration of the impurity ions in the second center-doped region ranges from about 1E18 atom/cm 3 to about 1E19 atom/cm 3 , and
the concentration of the impurity ions in the first center-doped region is higher than about 1E19 atom/cm 3 .
6. The device according to claim 1 , further comprising a shallow trench isolation (STI) structure between adjacent doped regions.
7. The device according to claim 1 , wherein the concentration of the impurity ions in the second center-doped region is gradually increased from a lower surface of the second center-doped region to an upper surface of the second center-doped region.
8. The device according to claim 1 , wherein:
the first N-type doped region contains a plurality of discrete third P-type doped regions to divide the first N-type doped region into a plurality of first N-type sub-doped regions, and
one discrete third P-type doped region is between and in contact with adjacent first N-type sub-doped regions.
9. The device according to claim 1 , wherein:
the second P-type doped region contains a plurality of discrete third N-type doped regions to divide the second P-type doped region into a plurality of second P-type sub-doped regions, and
one discrete third N-type doped region is between and in contact with adjacent second P-type sub-doped regions.
10. The device according to claim 1 , wherein the first center-doped region and the second center-doped region are co-centered.
11. The device according to claim 1 , wherein the first N-type doped region, the P-type well region, and the second center-doped region form a parasitic NPN transistor.
12. A method for forming an SCR ESD device, comprising:
providing a semiconductor substrate;
forming, in the semiconductor substrate, a P-type well region and an N-type well region adjacent to the P-type well region;
forming a second center-doped region that extends across the P-type well region and the N-type well region;
forming a first center-doped region in and enclosed by the second center-doped region, a depth of the second center-doped region being greater than a depth of the first center-doped region, wherein the first center-doped region and the second center-doped region are doped with impurity ions of a same type, a concentration of the impurity ions in the first center-doped region being higher than a concentration of the impurity ions in the second center-doped region;
forming a first P-type doped region in the P-type well region at a first side of the second center-doped region;
forming a first N-type doped region in the P-type well region at the first side of the second center-doped region, the first N-type doped region being located between the first P-type doped region and the second center-doped region;
forming a second N-type doped region in the N-type well region at a second side of the second center-doped region; and
forming a second P-type doped region in the N-type well region at the second side of the second center-doped region, the second P-type doped region being located between the second N-type doped region and the second center-doped region.
13. The method according to claim 12 , wherein:
the impurity ions doped in the first center-doped region and the second center-doped region are N-type,
the depth of the second center-doped region is smaller than a depth of the N-type well region, and
the concentration of the impurity ions in the second center-doped region is higher than a concentration of impurity ions in the N-type well region.
14. The method according to claim 13 , wherein
the concentration of the impurity ions in the N-type well region is less than about 1E18 atom/cm 3 ,
the concentration of the impurity ions in the second center-doped region ranges from about 1E18 atom/cm 3 to about 1E19 atom/cm 3 , and
the concentration of the impurity ions in the first center-doped region is higher than about 1E19 atom/cm 3 .
15. The method according to claim 12 , wherein:
the impurity ions doped in the first center-doped region and the second center-doped region are P-type,
the depth of the second center-doped region is smaller than a depth of the P-type well region, and
the concentration of the impurity ions in the second center-doped region is higher than a concentration of impurity ions in the P-type well region.
16. The method according to claim 15 , wherein
the concentration of the impurity ions in the P-type well region is less than about 1E18 atom/cm 3 ,
the concentration of the impurity ions in the second center-doped region ranges from about 1E18 atom/cm 3 to about 1E19 atom/cm 3 , and
the concentration of the impurity ions in the first center-doped region is higher than about 1E19 atom/cm 3 .
17. The method according to claim 12 , further comprising:
forming an STI structure between adjacent doped regions.
18. The method according to claim 12 , wherein:
when the impurity ions doped in the first center-doped region are N-type, the first center-doped region, the first N-type doped region, and the second N-type doped region are formed by a same N-type ion implantation process; and
when the impurity ions doped in the first center-doped region are P-type, the first center-doped region, the first P-type doped region, and the second P-type doped region are formed by a same P-type ion implantation process.
19. The method according to claim 12 , wherein the first center-doped region and the second center-doped region are co-centered.
20. The method according to claim 12 , wherein the first N-type doped region, the P-type well region, and the second center-doped region form a parasitic NPN transistor.