FinFETs having epitaxial capping layer on fin and methods for forming the same
View Patent ↗A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
1. A method comprising:
forming a semiconductor fin on a doped substrate, the semiconductor fin having a first region, a second region, and a third region, the second region being interposed between the first region and the third region;
forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
implanting the semiconductor fin with dopants, the implanting the semiconductor fin with dopants causes twin plane defects in the semiconductor fin;
after implanting the semiconductor fin with dopants, recessing the isolation region to expose at least a portion of the semiconductor fin;
epitaxially growing a capping layer on a top surface and sidewalls of the exposed portion of the semiconductor fin in at least the second region of the semiconductor fin, the capping layer being formed over the twin plane defects;
after epitaxially growing the capping layer, forming a gate dielectric on the capping layer in the second region of the semiconductor fin; and
forming a gate electrode on the gate dielectric.
2. The method of claim 1 , wherein the capping layer is a homoepitaxial or heteroepitaxial structure.
3. The method of claim 1 , wherein the capping layer has a thickness from 2 nm to 6 nm.
4. The method of claim 1 , wherein the dopants comprise boron, phosphorous, arsenic, germanium, carbon, fluorine, indium, or a combination thereof.
5. The method of claim 1 wherein the forming a semiconductor fin on a substrate further comprises:
patterning the substrate to form a semiconductor fin extending above the substrate.
6. The method of claim 1 further comprising:
forming a source region in the first region of the semiconductor fin; and
forming a drain region in the third region of the semiconductor fin, the capping layer extending across the top surface of the second region of the semiconductor fin from the first region to the third region.
7. A method comprising:
doping a substrate with dopants;
forming a semiconductor fin on the doped substrate;
forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
implanting dopants into the semiconductor fin, the implanting dopants into the semiconductor fin causing twin plane defects in the semiconductor fin;
after implanting dopants into the semiconductor fin, recessing the isolation region to expose an upper portion of the semiconductor fin; and
epitaxially growing a capping layer on a top surface and sidewalls of the semiconductor fin, the top surface and sidewalls being on the upper portion of the semiconductor fin, the capping layer being a homoepitaxial structure, the capping layer being epitaxially grown over the twin plane defects.
8. The method of claim 7 , wherein a bottom surface of the capping layer adjoins a top surface of the isolation region.
9. The method of claim 7 further comprising doping the capping layer as the capping layer is being grown.
10. The method of claim 7 further comprising:
forming a gate dielectric on the capping layer; and
forming a gate electrode on the gate dielectric.
11. The method of claim 7 further comprising:
after implanting dopants into the semiconductor fin and before recessing the isolation region, performing an anneal process on the semiconductor fin.
12. The method of claim 7 further comprising:
before epitaxially growing the capping layer on the upper portion of the semiconductor fin, performing a dry etch process on the upper portion of the semiconductor fin.
13. The method of claim 7 , wherein the capping layer has a thickness from 2 nm to 6 nm.
14. The method of claim 7 , wherein the dopants comprise boron, phosphorous, arsenic, germanium, carbon, fluorine, indium, or a combination thereof.
15. The method of claim 7 further comprising:
forming a second semiconductor fin on the doped substrate, before implanting dopants into the semiconductor fin, the isolation region surrounding the second semiconductor fin, the isolation region contacting opposite sidewalls of both the semiconductor fin and the second semiconductor fin.
16. A method comprising:
forming a semiconductor fin on a doped substrate;
forming an isolation region on the doped substrate, the isolation region surrounding the semiconductor fin;
implanting dopants into the semiconductor fin;
after implanting dopants into the semiconductor fin, recessing the isolation region to expose at least a portion of the semiconductor fin;
performing a dry etch process on the exposed portion of the semiconductor fin;
after performing the dry etch process, epitaxially growing a capping layer on a top surface and sidewalls of the semiconductor fin;
forming a gate dielectric on the capping layer;
forming a gate electrode on the gate dielectric;
forming a source region in the semiconductor fin; and
forming a drain region in the semiconductor fin, the source region being on an opposite side of the gate electrode than the drain region, the capping layer extending across the top surface of the semiconductor fin from the source region to the drain region.
17. The method of claim 16 , wherein the implanting dopants into the semiconductor fin causes twin plane defects in the semiconductor fin, wherein the capping layer is epitaxially grown over the twin plane defects.
18. The method of claim 16 , wherein a bottom surface of the capping layer adjoins a top surface of the isolation region.
19. The method of claim 16 further comprising:
after implanting dopants into the semiconductor fin and before recessing the isolation region, performing an anneal process on the semiconductor fin.