Apparatus and method for optically initiating collapse of a reverse biased P-type-N-type junction to cause a semiconductor switch to transition from a current blocking mode to a current conduction mode

1. A semiconductor switch, comprising:

a. a first layer comprising a P-type semiconductor material;

b. a second layer comprising a semiconductor material doped with a mid-band dopant, wherein the second layer is in contact with the first layer;

c. a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, wherein the third layer is in contact with the second layer thereby forming a semiconductor junction interface between the second layer and the third layer; and

d. a fourth layer comprising an N-type semiconductor material, wherein the fourth layer is in contact with the third layer;

wherein the semiconductor switch is configurable in a reverse-bias circuit such that in a first switch state the semiconductor junction interface is reverse biased thereby blocking current flow through the circuit in the absence of optical energy from an optical energy source, and wherein optical energy applied to the switch from the optical energy source produces a second switch state in which a sufficient electrical charge is produced in the switch to cause an electric field present at a depletion region in the switch to exceed a breakdown level at the semiconductor junction interface, thereby enabling a flow of current through the switch.

2. The semiconductor switch of claim 1 , wherein an energy level of the optical energy applied to the switch from the optical energy source is less than a band-gap energy of a basic material forming the switch, and further wherein the energy level of the optical energy applied to the switch from the optical energy source is sufficient to ionize the mid-band dopant.

3. The semiconductor switch of claim 2 , wherein the basic material comprises silicon carbide.

4. The semiconductor switch of claim 3 , wherein the mid-band dopant comprises vanadium or zinc or a combination of vanadium and zinc.

5. The semiconductor switch of claim 2 , wherein the fourth layer and third layer are configured to allow at least some of the optical energy from the optical energy source to pass through, and the second layer is configured to absorb the optical energy passing through the fourth and third layer.

6. The semiconductor switch of claim 2 , further comprising a metal-Ohmic contact forming an electrical connection between the fourth layer and the reverse biasing circuit.

7. The semiconductor switch of claim 6 , wherein the metal-Ohmic contact comprises a contact opening, and wherein the metal-Ohmic contact is positioned to receive optical energy from the optical energy source through the contact opening.

8. An optically-activated switching apparatus, comprising:

a. a semiconductor device, comprising:

i. a first layer comprising a P-type semiconductor material;

ii. a second layer comprising a material doped with a mid-band dopant, wherein the second layer is in contact with the first layer;

iii. a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, wherein the third layer is in contact with the second layer thereby forming a semiconductor interface between the second layer and the third layer; and

iv. a fourth layer comprising an N-type semiconductor material, wherein the fourth layer is in contact with the third layer;

b. a reverse biasing circuit electrically connected to the semiconductor device to apply a reverse bias to the semiconductor device; and

c. an optical energy source configured to selectively direct optical energy onto the semiconductor device.

9. The optically-activated switching apparatus of claim 8 , wherein the semiconductor device comprises silicon carbide.

10. The optically-activated switching apparatus of claim 9 , wherein the mid-band dopant comprises vanadium.

11. The optically-activated switching apparatus of claim 10 , wherein the photon energy of the optical energy source is at least 2.1 eV.

12. The optically-activated switching apparatus of claim 11 , wherein the optical energy source is a green light source.

13. The optically-activated switching apparatus of claim 12 , wherein the optical energy source comprises a frequency-doubled YAG laser.

14. The optically-activated switching apparatus of claim 11 , wherein the optical energy source comprises a green laser diode.

15. The optically-activated switching apparatus of claim 8 , wherein the optical energy source is configured to apply the optical energy at the fourth layer.

16. A method for optically activating a semiconductor switch, wherein the switch comprises a first layer comprising a P-type semiconductor material, a second layer comprising a semiconductor material doped with a mid-band dopant, a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, and a fourth layer comprising an N-type semiconductor material, wherein the method comprises the steps of:

a. reverse biasing the switch by applying a source potential comprising a positive lead and a negative lead, wherein the positive lead is electrically connected to the fourth layer and the negative lead is electrically connected to the first layer;

b. directing an optical energy source toward the semiconductor switch; and

c. activating the optical energy source to apply sufficient optical energy to cause an electric field at a depletion layer adjacent an interface within the semiconductor switch to exceed a breakdown level, thereby enabling a flow of current.

17. The method of claim 16 , wherein the directing an optical energy source toward the semiconductor switch step comprises the step of directing the optical energy source toward the fourth layer of the semiconductor switch.

18. The method of claim 16 , wherein the activating the optical energy source step comprises the application of photon energy of at least 2.1 eV.

19. The method of claim 16 , wherein the activating the optical energy source step comprises the application of green optical energy to the semiconductor switch.