Image capturing element and image capturing apparatus for removing infrared components from light
To provide an image capturing element and an image capturing apparatus in which an image capturing optical system can be thinned without degrading image capturing properties. An image capturing element according to an embodiment of the present technology includes an on-chip lens, a low refractive index layer and an infrared absorption layer. The on-chip lens is composed of a high refractive index material. The low refractive index layer is formed flatly on the on-chip lens and is composed of a low refractive index material. The infrared absorption layer is laminated above the low refractive index layer and is composed of an infrared absorption material.
1. An image capturing element, comprising:
an on-chip lens composed of a high refractive index material;
a low refractive index layer composed of a low refractive index material formed flatly on the on-chip lens;
an infrared absorption layer composed of an infrared absorption material laminated above the low refractive index layer; and
a multilayer infrared reflection layer composed of a multilayer film of a high refractive index material and a low refractive index material and laminated above the low refractive index layer.
2. The image capturing element according to claim 1 ,
wherein the infrared absorption material includes an infrared absorption pigment.
3. The image capturing element according to claim 1 ,
wherein the infrared absorption material includes at least one of a binder resin and an additive.
4. The image capturing element according to claim 1 ,
wherein the infrared absorption material has a heating yellowing temperature of 180° C. or more.
5. The image capturing element according to claim 2 ,
wherein the infrared absorption pigment has a maximum absorption wavelength of 600 nm to 1200 nm and has a molar absorbance coefficient of 1000 L/mol cm or more.
6. The image capturing element according to claim 1 ,
wherein the infrared absorption layer has a thickness of 1 μm to 200 μm.
7. The image capturing element according to claim 1 , further comprising:
a reflection prevention layer laminated as an uppermost layer to prevent reflection of light incident from an upper layer side or a lower layer side.
8. The image capturing element according to claim 1 , further comprising:
a color filter layer laminated below the on-chip lens.
9. The image capturing element according to claim 8 ,
wherein the color filter layer has an infrared absorption ability.
10. The image capturing element according to claim 1 , further comprising:
a support substrate that supports the infrared absorption layer.
11. The image capturing element according to claim 1 , further comprising:
a support substrate that supports the multilayer infrared reflection layer.
12. The image capturing element according to claim 11 ,
wherein the support substrate further supports the infrared absorption layer.
13. The image capturing element according to claim 1 , further comprising:
an adhesion layer composed of an adhesive material laminated on the low refractive index layer.
14. An image capturing apparatus, comprising:
an image capturing element, including:
an on-chip lens composed of a high refractive index material;
a low refractive index layer composed of a low refractive index material formed flatly on the on-chip lens;
an infrared absorption layer composed of an infrared absorption material laminated above the low refractive index layer; and
a multilayer infrared reflection layer composed of a multilayer film of a high refractive index material and a low refractive index material and laminated above the low refractive index layer; and
an image capturing optical system configured to capture an image of an object on the image capturing element.
15. The image capturing apparatus according to claim 14 , further comprising:
an infrared cut filter disposed within the image capturing optical system or between the image capturing element and the image capturing optical system to decrease an infrared component.
16. The image capturing element according to claim 1 ,
wherein the low refractive index layer lies between the on-chip lens and the infrared absorption layer.
17. An image capturing element, comprising:
an on-chip lens composed of a high refractive index material;
a low refractive index layer composed of a low refractive index material formed flatly on the on-chip lens; and
an infrared absorption layer composed of an infrared absorption material laminated above the low refractive index layer, wherein the infrared absorption material includes an infrared absorption pigment, wherein the infrared absorption material includes at least one of a binder resin and an additive, and wherein the infrared absorption material has a heating yellowing temperature of 180° C. or more.