Semiconductor device and method for forming the same
A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes a polysilicon electrode, an insulating layer disposed on the polysilicon electrode, and a metal electrode disposed on the insulating layer. A method for forming the semiconductor device is also disclosed.
1. A semiconductor device, comprising:
a substrate having an isolation structure therein;
a capacitor disposed on the isolation structure and comprising:
a polysilicon electrode;
an insulating layer disposed on the polysilicon electrode; and
a metal electrode disposed on the insulating layer;
a polysilicon layer disposed on the isolation structure; and
a resistor disposed on the polysilicon layer and comprising an another metal electrode, wherein the insulating layer extends between the another metal electrode and the polysilicon layer, and a top surface of the polysilicon electrode is below a bottom surface of the another metal electrode over the insulating layer.
2. The semiconductor device as claimed in claim 1 , wherein the polysilicon electrode comprises a silicide layer adjacent to the top surface of the polysilicon electrode.
3. The semiconductor device as claimed in claim 2 , wherein the silicide layer comprises cobalt silicide, titanium silicide or tungsten silicide.
4. The semiconductor device as claimed in claim 1 , wherein the metal electrode comprises titanium nitride, tantalum nitride or a copper aluminum alloy.
5. The semiconductor device as claimed in claim 1 , wherein the metal electrode has a thickness in a range of 200 Å to 800 Å.
6. The semiconductor device as claimed in claim 1 , wherein the insulating layer comprises an oxynitride layer, an oxide layer, oxide-nitride-oxide stacked layers or high k dielectric material layers.
7. The semiconductor device as claimed in claim 1 , wherein the isolation structure is a shallow trench isolation structure.
8. The semiconductor device as claimed in claim 1 , further comprising:
a first contact disposed on and electrically connected to the metal electrode; and
a second contact disposed on the polysilicon electrode and penetrating the insulating layer to be electrically connected to the polysilicon electrode.
9. The semiconductor device as claimed in claim 1 , wherein the bottom surface of the another metal electrode over the insulating layer is above a bottom surface of the metal electrode.
10. A method for forming a semiconductor device, comprising:
providing a substrate having an isolation structure therein;
forming a polysilicon electrode and a polysilicon layer on the isolation structure;
forming an insulating layer on the polysilicon electrode and the polysilicon layer; and
forming a metal electrode and an another metal electrode on the insulating layer, wherein a capacitor is composed of the polysilicon electrode, the insulating layer and the metal electrode over the polysilicon electrode, and a resistor comprises the another metal electrode over the polysilicon layer, and wherein a top surface of the polysilicon electrode is below a bottom surface of the another metal electrode over the insulating layer.
11. The method as claimed in claim 10 , wherein the step of forming the polysilicon electrode comprises forming a silicide layer adjacent to a top surface of the polysilicon electrode.
12. The method as claimed in claim 11 , wherein the silicide layer comprises cobalt silicide, titanium silicide or tungsten silicide.
13. The method as claimed in claim 10 , wherein the metal electrode comprises titanium nitride, tantalum nitride or a copper aluminum alloy.
14. The method as claimed in claim 10 , wherein the metal electrode has a thickness in a range of 200 Å to 800 Å.
15. The method as claimed in claim 10 , wherein the insulating layer comprises an oxynitride layer, an oxide layer, oxide-nitride-oxide stacked layers or high k dielectric material layers.
16. The method as claimed in claim 10 , wherein the isolation structure is a shallow trench isolation structure.
17. The method as claimed in claim 10 , further comprising:
forming a first contact on the metal electrode to be electrically connected thereto; and
forming a second contact on the polysilicon electrode to be electrically connected thereto, wherein the second contact penetrates the insulating layer.
18. The method as claimed in claim 10 , wherein the bottom surface of the another metal electrode over the insulating layer is above a bottom surface of the metal electrode.
19. The semiconductor device as claimed in claim 8 , wherein the metal electrode is sandwiched between the insulating layer and the first contact.