IP Library Granted Patent US 9,526,161
Granted Patent B2
US 9,526,161 · App. 14/825,301 · Granted Dec 20, 2016

High-frequency power supply device

Inventor: Toshiya Habu (Kyoto, JP)
Assignee: SHIMADZU CORPORATION
H05H1/46G01J3/027H01J37/321H01J37/32174H05H1/36H05H2001/4652H05H2001/4682
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Quick Facts
Patent No.
US 9,526,161
App. No.
14/825,301
Granted
Dec 20, 2016
Kind
B2
Abstract

A transformer is formed into a substantially U shape. The length of the transformer may thus be secured, and also the length of pattern wiring between an input terminal and an output terminal of a secondary coil of the transformer and the control terminals of a semiconductor device may be reduced. Moreover, the primary coil and the secondary coil of the transformer are arranged in parallel. The coupling coefficient between the primary coil and the secondary coil is thereby increased. An LC resonant circuit, not including the induction coil, and a switching circuit and the transformer are accommodated inside a housing. A water-cooling radiator is provided inside the housing, and also air inside the housing is circulated by a cooling fan while being guided to the radiator.

Claims (20)

1. A high-frequency power supply device of a self-oscillating method, the device comprising:

a DC power supply;

an LC resonant circuit including an induction coil for plasma generation, and a capacitor;

a switching circuit including a semiconductor device that switches DC power supplied from the DC power supply, and provides high-frequency power to the LC resonant circuit; and

a transformer including a primary coil that is included in the LC resonant circuit, and a secondary coil that is connected to a control terminal of the semiconductor device to turn on or off the semiconductor device,

wherein the transformer is formed into a substantially U shape,

wherein the primary coil and the secondary coil of the transformer are arranged in parallel, and

wherein a capacitor is connected to the control terminal of the semiconductor device, in parallel with the secondary coil.

2. The high-frequency power supply device according to claim 1 , wherein the transformer is formed into a co-axial structure including the primary coil and the secondary coil on a same axis.

3. The high-frequency power supply device according to claim 2 , wherein the transformer is configured by a semi-rigid co-axial cable.

4. The high-frequency power supply device according to claim 1 , wherein the transformer is in contact with an insulating radiator.

5. The high-frequency power supply device according to claim 1 , wherein the semiconductor device is a MOSFET.

6. A high-frequency power supply device of a self-oscillating method, the device comprising:

a DC power supply;

an LC resonant circuit including an induction coil for plasma generation, and a capacitor;

a switching circuit including a semiconductor device that switches DC power supplied from the DC power supply, and provides high-frequency power to the LC resonant circuit;

a transformer including a primary coil that is included in the LC resonant circuit, and a secondary coil that is connected to a control terminal of the semiconductor device to turn on or off the semiconductor device;

a housing configured to accommodate the LC resonant circuit, not including the induction coil, and the switching circuit and the transformer;

a water-cooling radiator, provided inside the housing, configured to cool parts inside the housing; and

a cooling fan, provided inside the housing, configured to cause air inside the housing to circulate while guiding the air to the radiator.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 13, 2015
From: HABU, TOSHIYA
To: SHIMADZU CORPORATION
Reel/Frame 036319/0321 →
Priority Claims (1)
JP 2014-175349 · Aug 29, 2014 · national
Continuity (1)
Related Publication 20160066404A1 · Mar 3, 2016