System and method for treating a substrate
Disclosed are systems and methods for treating a substrate. The method may include supplying supercritical carbon dioxide into a chamber to treat a substrate. Here, temperature and pressure of the chamber is maintained to allow carbon dioxide to be directly changed from a gas state to a supercritical state when the carbon dioxide is supplied into the chamber.
1. A method of treating a substrate, comprising:
supplying supercritical carbon dioxide into a chamber to treat a substrate;
drying the substrate using the supercritical carbon dioxide to remove an organic solvent from a gap between patterns of the substrate, wherein
a temperature and a pressure of the chamber are maintained to allow carbon dioxide to be directly changed from a gas state to a supercritical state when the carbon dioxide is supplied into the chamber.
2. A substrate treating system, comprising:
a chamber having a treatment space therein;
a supporting device in the treatment space to support a substrate;
a fluid supply configured to supply supercritical carbon dioxide into the treatment space, the fluid supply including a valve configured to control an amount of fluid supplied into the chamber;
a heater configured to heat the chamber; and
a controller configured to heat the heater, the controller configured to control,
the heater such that a temperature of the chamber is maintained to allow carbon dioxide to be directly changed from a gas state to a supercritical state when the carbon dioxide is supplied into the chamber, and
the valve such that a pressure of the chamber is maintained to allow carbon dioxide to be directly changed from a gas state to a supercritical state when the carbon dioxide is supplied into the chamber.