Selective epitaxy using epitaxy-prevention layers

1. A method for forming an epitaxial structure, comprising:

providing a two-dimensional material on a crystal semiconductor material;

opening up portions of the two-dimensional material to expose the crystal semiconductor material; and

epitaxially growing a structure in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.

2. The method as recited in claim 1 , wherein the two dimensional material includes graphene.

3. The method as recited in claim 2 , wherein the crystal semiconductor material includes SiC and the graphene layer is grown on the SiC.

4. The method as recited in claim 1 , wherein the two dimensional material includes MoS 2 or WS 2 .

5. The method as recited in claim 1 , wherein the two-dimensional material is transferred to the crystal semiconductor material by a layer transfer process.

6. The method as recited in claim 1 , wherein opening up portions of the two-dimensional material includes forming an etch mask using lithography and etching the two-dimensional material to open up the portions.

7. The method as recited in claim 1 , further comprising removing the two-dimensional material.

8. A method for forming an epitaxial structure, comprising:

providing a two-dimensional material on a semiconductor substrate;

patterning the two-dimensional material by opening up portions to expose the semiconductor substrate;

selectively growing a structure on exposed portions of the semiconductor substrate using an epitaxial growth process such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material;

removing the two-dimensional material; and

processing the structure to form an electronic device.

9. The method as recited in claim 1 , wherein the two dimensional material includes graphene.

10. The method as recited in claim 9 , wherein the semiconductor substrate includes SiC and the graphene layer is grown on the SiC.

11. The method as recited in claim 9 , wherein the two dimensional material includes MoS 2 or WS 2 .

12. The method as recited in claim 9 , wherein the two-dimensional material is transferred to the semiconductor substrate by a layer transfer process.

13. The method as recited in claim 9 , wherein patterning includes forming an etch mask using lithography and etching the two-dimensional material to open up the portions.

14. The method as recited in claim 9 , wherein processing the structure includes forming a transistor.

15. The method as recited in claim 9 , wherein processing the structure includes forming one of a diode or a laser.

16. A method for forming an epitaxial structure, comprising:

providing a graphene layer on a silicon carbide substrate;

patterning the graphene layer to expose portions of the substrate; and

epitaxially growing a semiconductor structure in the portions of the substrate such that the epitaxial growth is selective to the portions exposed on the substrate relative to the graphene.

17. The method as recited in claim 16 , wherein the graphene layer is transferred to the substrate by a layer transfer process.

18. The method as recited in claim 16 , wherein patterning includes forming an etch mask using lithography and etching the graphene layer to open up the portions.

19. The method as recited in claim 16 , wherein providing a graphene layer includes growing the graphene layer on the substrate.

20. The method as recited in claim 16 , wherein epitaxially growing a semiconductor structure includes epitaxially growing GaN on the substrate.